摘要
随着晶体管特征尺寸的不断减小,威胁数字电路可靠性的一个重要因素是负偏置温度不稳定性。为了缓解NBTI效应对电路产生的老化影响,文中提出时延约束、路径约束和考虑非门的可防护性约束的多约束下,通过计算门的影响因数的大小来寻找定位关键门集合,用门替换的方法来防护关键门。通过实验进行证明,文中提出的方法不仅识别出的关键门数量少,且更加精准,老化的时延改善率更高。
As the feature size of the transistor decreases constantly,negative bias temperature instability(NBTI)becomes an important factor threatening the reliability of the digital circuit.Under the multiple constraints of time delay constraint,path constraint,and protective constraint considering non-gate,the influence factor of the gate is calculated to search and locate criti-cal gate sets,and the gate replacement method is used to protect critical gates,so as to mitigate the influence of the NBTI effect on circuit aging.The experimental results prove that the method proposed in this paper identifies a small number of critical gates,is more accurate in critical gate search,and has a high time-delay reduction rate during aging.
作者
周瑞云
易茂祥
黄正峰
ZHOU Ruiyun;YI Maoxiang;HUANG Zhengfeng(School of Electronic Science and Applied Physics,Hefei University of Technology,Hefei 230009,China)
出处
《现代电子技术》
北大核心
2018年第22期113-116,共4页
Modern Electronics Technique
基金
国家自然科学基金资助项目(61371025)
国家自然科学基金资助项目(61274036)~~
作者简介
周瑞云(1993—),男,安徽合肥人,硕士研究生,研究方向为集成电路可靠性、集成电路抗老化设计;易茂祥(1964—),男,安徽广德人,博士,教授,硕士生导师,研究方向为VLSI测试与可靠性、集成电路抗老化设计。
