摘要
为提高传统Ga N基LED的发光效率,提出了一种基于纳米光栅结构的透射式表面等离激元增强型Ga N-LED。该增强型LED包含覆盖在p型Ga N光栅槽内的低折射率SiO_2膜、Ag膜以及槽表面的ITO薄膜。详细阐述了该结构增强LED发光特性的基本原理,利用基于有限元法的模拟软件"COMSOL^(TM)-RF Module"对该结构进行参数优化和数值模拟分析。研究结果表明,在周期p=280 nm,占空比f=0.5,SiO_2层的厚度d_(SiO_2)=25 nm,银层的厚度d_(Ag)=15 nm,ITO层的厚度d_(ITO)=30 nm时,该结构在可见光范围内具有较高的传输效率,其零阶透射率高达0.716,零阶反射率为0.224,-1阶透射率峰值0.183,且Purcell因子增强了近16.4倍。该结构可以同时提高Ga N基LED的内量子效率、光萃取效率和SPP萃取效率。
In order to improve the luminous efficiency of conventional GaN-LED,a transmissive surface plasmon enhanced GaN-LED based on nano-grating was proposed.The enhanced LED included a low refractive index SiO2 film and a Ag film in the p-GaN grating slot,and the top layer ITO film.The basic principle of improving LED emission characteristics for this new structure was described in detail,and with simulation software"COMSOL^TM-RF Module"based on the finite element method,the parameter optimization and numerical simulation analysis for the structure were studied.The results show that when the period p=280 nm,the duty ratio f=0.5,dSiO2=25 nm,dAg=15 nm,dITO=30 nm,the transmission efficiency of the structure is higher in the visible range,and the 0th order transmittance is 0.716,the 0th order reflectivity is 0.224,the peak of the-1st order transmittance is 0.183,with Purcell factor enhancing nearly 16.4 times.The internal quantum efficiency,light extraction efficiency and SPP extraction efficiency can be improved simultaneously in this new GaN-LED.
作者
李志全
刘同磊
白兰迪
谢锐杰
岳中
冯丹丹
顾而丹
Li Zhiquan;Liu Tonglei;Bai Landi;Xie Ruijie;Yue Zhong;Feng Dandan;Gu Erdan(Institute of Electrical Engineering,Yanshan University,Qinhuangdao 066004,China)
出处
《红外与激光工程》
EI
CSCD
北大核心
2018年第9期195-202,共8页
Infrared and Laser Engineering
基金
河北省自然科学基金(F2017203316)
关键词
光学器件
发光二极管
有限元法
纳米光栅
表面等离激元
optical devices
light emitting diode
finite element method
nano-grating
surface plasmons
作者简介
李志全(1954-),男,教授,博士生导师,博士,主要从事非线性光电检测及微纳米结构光学性能方面的研究。Email:lzq54@ysu.edu.cn。
