摘要
采用减小栅长(L_g)的方法可以显著提高磷化铟基高电子迁移率晶体管(InP HEMT)器件的直流和微波性能,并使器件的工作频率上升到太赫兹频段。采用T形栅工艺制备了70 nm栅长的InP HEMT器件,器件的直流跨导达到了2.87 S/mm,截止频率f_t和最大振荡频率f_(max)分别为230 GHz和310 GHz。对器件的寄生参数进行了提取和去嵌入,得到了器件的本征S参数。采用经典的9参数模型拓扑结构对器件进行了小信号建模,模型仿真与测试结果拟合良好。针对电流的短沟道效应,采用电流分段的方法来拟合I-V曲线,取得了较好的拟合结果。最后采用Angelov模型对器件的电容进行建模,并最终建立了器件的大信号模型。
DC and microwave performances of InP High Electron Mobility Transistor(HEMT)can be greatly improved by decreasing the gate length(L g),thus the device has the capability of being used in terahertz frequency.An InP HEMT is fabricated with 70 nm gate length using T-gate process.DC transconductance,maximum cut-off frequency(f t)and maximum oscillating frequency(f max)of the device are 2.87 S/mm,230 GHz and 310 GHz,respectively.Intrinsic S parameters are obtained after parasitic parameters extraction and de-embedding.Then small-signal model is built using the classical 9-parameter topology,and good agreement between the model and measurement is achieved,which confirms its validity.For the short channel effect,a method of regional drain current modeling is introduced,and the fitting result is quite good.Finally,the large-signal is modeled based on the capacitance model created by using Angelov model.
作者
何美林
刘亚男
胡志富
崔玉兴
HE Meilin;LIU Ya’nan;HU Zhifu;CUI Yuxing(The 13th Research Institute,China Electronic Technology Corporation,Shijiazhuang Hebei 050051,China)
出处
《太赫兹科学与电子信息学报》
2017年第3期349-353,共5页
Journal of Terahertz Science and Electronic Information Technology
作者简介
何美林(1989-),女,湖南省邵阳市人,硕士,工程师,研究方向为微波/射频器件建模和CAD仿真.email:hemeilin1989@163.com.;刘亚男(1983-),女,河北省保定市人,硕士,工程师,研究方向为微波/射频器件建模、CAD仿真和太赫兹电路设计.;胡志富(1982-),男,湖北省黄梅县人,硕士,高级工程师,研究方向为微波/射频器件建模、仿真和电路设计.;崔玉兴(1981-),男,山东省青州市人,硕士,研究员级高工,研究方向为器件设计和工艺开发.
