摘要
A sputtering-type microwave multipolar ECR plasma processing for preparing thin films, is built with Nd-Fe-B magnets and 2.45 GHz, TE<sub>10</sub> mode microwave. The plasma distributions in the axial direction, which is important for preparing thin films, are found to be very sensitive to the magnetic potential fields in plasma chamber. The plasma parameters are also influenced by the background gas pressure.
A sputtering-type microwave multipolar ECR plasma processing for preparing thin films, is built with Nd-Fe-B magnets and 2.45 GHz, TE<sub>10</sub> mode microwave. The plasma distributions in the axial direction, which is important for preparing thin films, are found to be very sensitive to the magnetic potential fields in plasma chamber. The plasma parameters are also influenced by the background gas pressure.
出处
《真空科学与技术学报》
EI
CAS
CSCD
1992年第Z1期151-154,共4页
Chinese Journal of Vacuum Science and Technology
