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GaN基白光LED可靠性研究与失效分析 被引量:8

Invalid Analysis and Dependability Research of GaN-based White LED
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摘要 针对LED样品检测中的样品短路失效、LED光源黑化、光通量下降和芯片表面通孔异常现象,采用金相切片、机械微操、静电测试等方式结合扫描电镜和能谱仪(EDS)等表征手段对失效机制进行了分析,揭示了LED失效原因。包括镀层银离子与杂质硫离子导致光源黑化;芯片抗静电电压低,部分样品发生静电击穿;失效芯片通孔下面的Ni-Sn共晶层存在大量空洞,使得复杂结构的芯片通孔应力不均,样品工作时芯片表面开裂破碎,从而导致PN结短路失效;封装胶中残存的杂质离子腐蚀芯片负电极导致电极脱落而出现漏电、光衰和死灯等现象。 The phenomenon of LED sample detection and its failure mechanism were reported. This phenomenon included the short-circuit failure, LED light source, the flux decreased and blackening the surface of the chip hole anomaly. We used many methods, including metallographic, mechanical micro and static test, combining with many instruments, including optical microscope, scanning electron microscope and X-ray analysis characterization. The analysis reveals that LED abnormalities and failures are caused by the following reasons. First, the coating of silver ion and impurity sulfur ions lead to blackening of the light source. Second, the antistatic voltage of the chip is low. Some samples were subjected to electrostatic breakdown. And in addition, a large number of voids exist in the Ni-Sn eutectic layer beneath the view of the chip. It causes the uneven stress of the chip through the complex structure, the thermal conductivity decreases, and the chip surface cracks and breaks while the sample is working. This results in short-circuit fault of PN junction. Third, residual impurity ions in the encapsulation adhesive corrode the negative electrode of the chip. It causes the electrode to fall off. It leads to leakage, light weak and dead lights.
作者 宋嘉良 文尚胜 马丙戌 符民 胡捷频 彭星 方方 廖少雄 康丽娟 SONG Jia-liang;WEN Shang-sheng;MA Bing-xu;FU Min;HU Jie-pin;PENG Xing;FANG Fang;LIAO Shao-xiong;KANG Li-juan(State Key Laboratory of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510640,China;Shanghai Engineering Research Center of Ultra-precision Optical Manufacturing,Fudan University,Shanghai 200433,China;Gold Medal Analytical & Testing Group,Guangzhou 511300,China;Tigerfire(Guangnzhou)Lighting Technology Corporation,Guangzhou 510170,China;Academy of Fine Arts,South China Normal University,Guangzhou 510631,China)
出处 《发光学报》 EI CAS CSCD 北大核心 2018年第12期1705-1713,共9页 Chinese Journal of Luminescence
基金 广东省科技计划(2017B010114001 201704030140 2015B010127004) 广东省应用型科技研发专项(2015B010134001) 广州市科技计划(201604040004 201604016010) 广东省扬帆计划(2015YT02C093) 中山市科技计划(2016A1009 2017C1011)资助项目~~
关键词 LED 可靠性分析 电极 芯片 封装 light-emitting-diode( LED) invalid analysis electrode chip encapsulation
作者简介 宋嘉良(1996-),男,山东潍坊人,硕士研究生,2018年于华南理工大学获得学士学位,主要从事LED封装及性能的研究。E-mail:sjl5ggg@foxmail.com;康丽娟(1977-),女,河南漯河人,硕士,副教授,2003年于湖北美术学院获得硕士学位,主要从事光学艺术设计的研究。E-mail:kangljuan@scnu.edu.cn
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