摘要
设计了一种基于亚阈值区MOS管的低功耗基准电压源。利用MOS管差分对的栅源电压差对MOS管的栅源电压进行温度补偿,从而得到基准输出电压。采用0.18μm混合信号CMOS工艺进行设计与仿真。结果表明,该基准电压源的最小工作电压为1.25V,在0℃～80℃温度范围内的温度系数为6.096×10^(-5)/℃。
A low power voltage reference based on sub-threshold MOSFET was proposed. To obtain reference output voltage, the gate-to-source voltage of MOSFET was compensated in temperature by exploiting the difference between the gate-to-source voltages of MOSFET differential pairs. The proposed voltage reference was designed and simulated in a 0. 18 btm mixed-signal CMOS process. Simulation results showed that it achieved a temperature coefficient of 6. 096 X 10-5/℃at the temperature range from 0 ℃to 80 ℃. And the minimum supply voltage was 1.25 V.
作者
侯德权
周莉
陈敏
肖璟博
刘云超
陈杰
HOU Dequan;ZHOU Li;CHEN Min;XIAO Jingbo;LIU Yunchao;CHEN Jie(Institute of Microelectronics , Chinese Academy of Sciences, Beij ing 100029, P. R. China University of Chinese Academy of Sciences, Beijing 100049, P. R. China)
出处
《微电子学》
CAS
CSCD
北大核心
2018年第5期574-578,共5页
Microelectronics
基金
国家自然科学基金资助项目(61434004)
国家重大仪器设备专项资助项目(2013YQ31079903)
作者简介
侯德权（1992-），男（汉族），四川宜宾人，硕士研究生，研究方向为模拟集成电路设计。;周莉（1977-），女（汉族），副研究员，硕士生导师。通讯作者，E-mail：zhouli@ime．ac．cn。;陈杰（1963-），男（汉族），研究员，博士生导师。通讯作者，E-mail：jchen@ime．ac．cn。
