摘要
采用循环伏安、计时安培测试研究了在20 g/L Cu SO_4+70 g/L H_2SO_4酸性镀液中Cl^-存在对铜沉积还原过程以及Cl^-浓度对铜在压延铜箔基体上电结晶初期行为的影响。研究表明,加入Cl^-,铜沉积起始电位大致不变,并在较低偏压(-0.3^-0.1 V_(SCE))下缩短铜结晶初期的形核弛豫时间,提高阴极还原电流;在较高的偏压(-0.6^-0.4 V_(SCE))下,Cl^-则阻碍铜的结晶沉积。通过扫描电镜还观察了Cl^-浓度、偏压对铜镀层组织形貌特征的影响,探讨了Cl^-在铜电结晶过程中的作用机理。
Influence of chloride ion on Cu deposition-reduction process as well as influence of chloride ion concentration on the initial electrodeposition behavior of copper on rolled copper foil in a 20 g/L Cu SO4＋70 g/L H2SO4solution were investigated by cyclic voltammetry and chronoamperometry.Results showed that an addition of chloride ion could seldom alter the initial potential of copper deposition,but shortened the nucleation relaxation time in the initial stage of copper crystallization and increased the cathode reduction current at a low bias voltage（-0.3--0.1 V（SCE））,while the existence of chloride ion at a high bias voltage（-0.6--0.4 V（SCE））could impeded the process of copper crystallization.The effects of chlorine ion concentration and bias voltage on the morphology of copper coating were observed by scanning electron microscope.The mechanism of chlorine ion in the process of copper electrocrystallization was also discussed.
作者
朱思哲
谭澄宇
刘晨
王芝秀
ZHU Si-zhe;TAN Cheng-yu;LIU Chen;WANG Zhi-xiu(College of Materials Science and Engineering,Central South University,Changsha 410083,Hunan,China;Jiangsu I（ey Laboratory of Materials Su~ace Science and Technology,Changzhou University,Changzhou 213164,Jiangsu,China)
出处
《矿冶工程》
CAS
CSCD
北大核心
2018年第2期119-123,127,共6页
Mining and Metallurgical Engineering
基金
江苏省材料表面科学与技术重点实验室开放课题(9W4548)
关键词
表面处理
粗化处理
氯离子
电结晶
镀层形貌
压延铜箔
surface treatment
roughening treatment
chloride ion
electrocrystallization
morphology of coating
rolledcopper foil
作者简介
朱思哲（1992-）,男,湖南湘潭人,硕士研究生,主要研究方向为铜箔表面处理.;通讯作者：谭澄宇（1963-）,男,教授,博士,主要从事铝合金材料、材料电化学、表面涂（镀）饰技术的研究
