摘要
采用0.15μm砷化镓赝配高电子迁移率晶体管工艺,设计一款频率400 MHz^2.4GHz宽带低噪声放大器。采用两级级联结构,将前级放大器的输入阻抗匹配到最佳噪声阻抗得到最小噪声;后级放大器采用负反馈结构得到较宽的工作频带;级间引入失配补偿方法,即在晶体管增益滚降处引入高频增益,使得放大器工作频带拓宽,提高带内平坦度。仿真结果表明,该低噪声放大器工作频率为400 MHz^2.4GHz,频带内噪声系数为1dB,增益为34dB,增益平坦度为3.1dB,回波损耗优于-10dB,满足了低噪声、超宽带和高平坦度的要求。
A low frequency noise amplifier chip with a frequency of 400 M H z - 2. 4 GHz is designed by using 0. 15 μm gallium arsenide pseudomorphic high electron mobility transistor process. The input impedance of the preamplifier is matched to the optimal noise impedance to obtain the minimum noise. The negative feedback structure is adopted in the post-stage amplifier to obtain a wider operating frequency band. The mismatch compensation method is introduced in the inter-stage, that is , the high-frequency gain is introduced in the transistor Gain roll-off. This makes the amplifier work band widened, and improves the in-band flatness. Simulation results show that the low noise amplifier is operated at 400 MH z -2. 4 G H z , the noise figure in the band is 1 dB , the gain is 34 dB , the gain flatness is 3. 1 dB , and the return loss is better than -10 dB. All these satisfies the requirements of the low noise, high flatness characteristics.
出处
《西安邮电大学学报》
2017年第4期52-56,共5页
Journal of Xi’an University of Posts and Telecommunications
基金
国家自然科学基金资助项目(61201044)
作者简介
张博（1983-）,男,博士,副教授,从事射频模拟集成电路研究,E-mail：zhangbo@xupt.edu.cn
张加傲（1991-）,男,硕士研究生,研究方向为集成电路系统设计.E-mail：zhangjiaao@sxasic.com
