摘要
大气压等离子体射流阵列是适合大面积复杂材料表面处理的等离子体形式。针对材料表面处理对大面积等离子体源的需求,在实现大气压一维Ar等离子体射流阵列的基础上,在工作气体中添加六甲基二硅醚(HMDSO)来获得含憎水性成分的射流阵列放电,利用电学和光学的诊断方法诊断射流阵列的放电特性,并研究了外加电压幅值和HMDSO体积分数变化对射流阵列放电均匀性、放电功率、传输电荷和主要活性粒子的影响,进而优化了大气压Ar等离子体射流阵列的工作条件,为射流阵列憎水改性应用提供参考。结果表明:随着HMDSO体积分数增加,放电电流脉冲幅值、每半周期的脉冲个数、放电功率以及传输电荷均下降,放电耦合排斥作用被抑制,放电均匀性有所加强;除了Si谱线,放电产生的主要粒子谱线强度均随HMDSO体积分数的增加而减小;Si谱线随着HMDSO体积分数提高先增大后减小,在HMDSO体积分数为0.02%时,Si谱线强度出现极大值,因此工作于该条件下的Ar/HMDSO等离子体射流阵列应用于材料的表面憎水改性,有望获得良好效果。
Atmospheric pressure plasma jet array is suitable for surface modification of large-area complicated material. To satisfy the needs of large-area plasma sources for material surface hydrophobic treatment, an atmospheric-pressure 1D Ar plasma jet array was accomplished and hexamethyldisiloxane （HMDSO） was added into its working gas to acquire plasma jet array containing hydrophobic containments. Electrical and optical methods were used to diagnose the discharge characteristic of jet array. Effects of applied voltage magnitude and content of HMDSO on discharge uniformity, dis- charge power, transported charge and main active particles were studied for optimizing the working condition of APPJ array in Ar and providing reference for hydrophobic modification by jet array. Results show that, as the content of HMDSO increases, the magnitude of discharge pulse current, the number of pulse current in each half cycle, discharge power, and transported charge are decreased, and the repulsion and coupling effect are restrained and the discharge uniformity is strengthened. Spectral intensities of main particles generated by discharge decrease as the content of HMDSO are increased, while the spectral intensity of silicon is increased before its descent. The maximal peak of silicon intensity exists when the content is 0.02% and plasma jet array fed by Ar/HMDSO working on this condition can be applied in hydrophobic material surface modification to achieve favorable effect.
出处
《高电压技术》
EI
CAS
CSCD
北大核心
2017年第6期1775-1783,共9页
High Voltage Engineering
基金
国家自然科学基金(51377075
51677083)
江苏省"六大人才高峰"项目 (2014-XNY-006)~~
关键词
等离子体射流
射流阵列
含硅成分
憎水性
放电特性
plasma jet
jet array
silicon-containing component
hydrophobicity
discharge characteristics
作者简介
方志（通信作者）,1977-，男，博士，教授，IEEE Senior Member,近年来一直从事高电压绝缘及气体放电等离子体的基本理论及其应用研究工作，发表学术论文100余篇，主持国家和省部级项目10项,E—mail：myfz@263．net
张波,1994-，男，硕士生,研究方向为等离子体射流阵列放电特性诊断及其应用,E-mail：zhbov5@sina．com
周若瑜,1994-，男，硕士生,研究方向为等离子体射流阵列放电特性诊断及其应用,E—mail：zhoury_njtech@sina．com
