摘要
利用射频磁控溅射法并经快速退火处理制备Cu_2SnS_3薄膜,研究了使用SnS_2、Cu_2S混合靶(摩尔比分别为1∶1、1∶1.5、1∶2)及在不同溅射功率(40和80W)条件下所制备Cu_2SnS_3薄膜的晶体结构、物相组成、化学组分、表面形貌和光学特性。结果表明:混合靶的SnS_2、Cu_2S最佳摩尔比为1∶1.5,利用该靶所制备薄膜均结晶;在溅射功率为80 W条件下,所制备薄膜结晶质量和择优取向度高,应变最小,Cu∶Sn∶S摩尔比为1.89∶1∶2.77,平均颗粒直径和平均粗糙度分别为332和0.742 nm,吸收系数达到10~4cm^(-1),禁带宽度为1.32 eV。制备了n-Si/p-CTS异质结器件,器件具有良好的整流特性和光电流响应特性。
The Cu2SnS3（ CTS） thin films were deposited by RF magnetron puttering of a lab-made SnS2/Cu2S target. The impact of the molar ratio of SnS2/Cu2S powders and sputtering power on the microstructures,stoichiometric ratio and optical properties of the CTS coating was investigated with X-ray diffraction,energy dispersive spectroscopy,atomic force microscopy,Raman spectroscopy and UV/VIS/NIR spectroscopy. The preliminary results show that high quality CTS coatings were deposited under the optimized conditions. To be specific,grown at a molar ratio of 1∶ 1. 5 and a sputtering power of 80 W,the polycrystalline tetragonal-phase CTS coatings consisted of 213 preferentially orientated grains with average grain-size of 332 nm,surface roughness of 0. 742 nm and stoichiometric ratio of 1. 89（ Cu） ∶ 1（ Sn） ∶ 2. 77（ S）. The absorption coefficient and band-gap were 10^4cm^-1 and 1. 32 eV respectively. Moreover,the n-Si/p-CTS hetero-junction,made of the low strain CTS coatings,displayed good properties of rectifying and photocurrent response.
出处
《真空科学与技术学报》
CSCD
北大核心
2017年第4期400-408,共9页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金(No.51272061)资助项目
关键词
Cu2SnS3薄膜
射频磁控溅射
快速退火
晶体结构
光学特性
Cu2SnS3 thin film
RF magnetron sputtering
Rapid thermal annealing
Crystalline structure
Optical properties
作者简介
联系人：Tel：13956030412；E-mail：liangqi@126．com
