摘要
室温下,采用直流反应磁控溅射法制备透明导电氧化亚铜(Cu_2O)薄膜。利用X射线衍射仪(XRD)、原子力显微镜(AFM)、四探针测试仪及拉曼光谱仪分别研究不同沉积时间下制备的Cu_2O薄膜的晶体结构、表面形貌、电阻率及表面增强拉曼散射特性。实验结果表明,沉积时间为3和6min时,获得单一相的透明导电Cu_2O薄膜;随着沉积时间的增加,薄膜由非晶态转变为(111)方向择优生长,薄膜致密且颗粒呈球状,其粗糙度的均方根(RMS)值增大,薄膜电阻率呈下降趋势;以罗丹明B(RhB)为探针分子,表征样品表面增强拉曼活性,通过对比不同样品表面RhB的拉曼光谱,其散射强度随薄膜表面粗糙度的增大而增强。
Cuprous oxide （Cu2 O） thin films were fabricated by DC reactive magnetron sputtering at room tem- perature. Effects of deposition time on crystal structure, phase composition, surface morphology, resistivity and surface-enhanced Raman scattering properties of the Cu20 films were characterized by X-ray diffraction （XRD）, atomic force microscopy （AFM）, four-probe tester and Raman spectroscopy, respectively. The results show that the single-phase transparent conductive Cu2 O film is obtained at the deposition time of 3 and 6 min.The phases of Cu2O films vary from amorphous to polycrystalline with the preferred orientation in （111） plane with the deposition time increasing. The surfaces of thin films consist of densely spherical grains and the Root mean square （RMS） roughness increases as the deposition time increasing. The resistivity decreased. With the Rhodamine B （RhB） as the probe molecule, Raman scattered spectrum was detected on the samples. By comparison of different samples, the results demonstrate the Raman signal was enhanced by surface roughness increased.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2017年第4期4096-4099,4104,共5页
Journal of Functional Materials
基金
国家重点研发计划资助项目(2016YFB1102300)
国家自然科学基金资助项目(61378060)
关键词
透明导电薄膜
氧化亚铜
直流反应磁控溅射
沉积时间
电阻率
拉曼光谱
transparent conductive thin film
cuprous oxide
DC reactive magnetron sputtering
deposition time
resistivity
Raman
作者简介
王进霞（1992-），女，河南周口人，在读硕士，师承洪瑞金副教授，从事纳米氧化物薄膜及功能薄膜研究。
通讯作者：洪瑞金，Email：rjhongcn@163．com
