摘要
采用原位聚合法制备了三明治结构的Si O_2纳米掺杂聚酰亚胺(PI)复合薄膜Si O_2-PI/PI/Si O_2-PI。利用透射电镜(TEM)、X-射线衍射(XRD)、扫描电镜(SEM)表征Si O_2纳米颗粒的分散状态及三层复合薄膜的断面结构,研究三层结构复合薄膜的介电性能、电导率、耐电晕性能和电气强度等电学性能。结果表明:Si O_2纳米颗粒可均匀地分散于聚酰亚胺基体中,三层复合薄膜具有清晰的界面分层;当Si O_2纳米颗粒掺杂量为20%时,三层复合薄膜的耐电晕老化时间最长,分别为纯PI和单层PI/Si O_2复合薄膜的26倍和2倍;当Si O_2纳米颗粒掺杂量为15%时,三层复合薄膜的电气强度达到最大值(280.6 k V/mm)。
A kind of sandwich-structured polyimide/SiO2 composite film （SiO2-PI/PI/SiO2-PI） was prepared by in-situ polymerization method. The dispersion of SiO2 nanoparticles and the cross-section structure of the composite film were studied via TEM, XRD, and SEM. Meanwhile, the dielectric property, conductivity, corona resistance, and electric strength of the sandwich-structured composite film were analyzed. The results show that the SiO2 nanoparticle could well disperse in the PI matrix, and there is clear interface between layers in the sandwich-structured composite film. When the doping content of SiO2 nanoparticle is 20%, the sandwich-structured composite film has the longest corona resistant ageing time, which is 26 times and twice longer than that of the pure PI film and monolayer PI/SiO2 composite film respectively. When the doping content of SiO2 nanoparticle is 15%, the electric strength of the sandwich-structured composite film reaches the maximum value （280.6 kV/mm）.
作者
王志强
殷景华
夏旭
姚磊
李佳龙
Wang Zhiqiang Yin Jinghua Xia Xu Yao Lei Li Jialong(College of Applied Science, Harbin University of Science and Technology, Harbin 150040, China Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin 150040, China)
出处
《绝缘材料》
CAS
北大核心
2017年第3期23-27,31,共6页
Insulating Materials
基金
国家自然科学基金重点项目(51337002)
作者简介
王志强（1990-），男（汉族），黑龙江鸡西人，硕士生，研究方向为纳米电介质的研究；
通信作者：殷景华（1957-），女（汉族），黑龙江哈尔滨人，教授，主要从事信息材料与器件的研究工作。
