摘要
本文研究了砷离子感生硅化铂的形成与生长动力学.用150keV的砷离子束轰击在P型、(111)单晶硅上淀积一层铂的薄膜的样品.在铂膜与单晶硅界面附近观察到铂与硅两类原子的混合层.用RBS方法研究混合层的厚度与砷离子的剂量和能量,以及与轰击时样品温度的依赖关系.用X射线衍射测量确认混合层的物相.实验结果说明,样品中存在的杂质如氧及氩将会影响硅化铂的形成与生长.
The formation and growth kinetics of the Pt-silicide induced by As^+ ion beams was investigated. The p-type, (111) oriented single crystal silicon wafers deposited with thin Pt films were bombarded by 150 keV As ion beams. A mixing layer of the Pt and Si atoms was observed near the interface of Pt films and Si substrates. The dependence of the amount of mixed atoms on As^+ ion doses, As^+ ion energy and temperatures of the samples during bombardment have been observed by RBS. X-ray diffraction measurements have been used to confirm the phases of Pt-silicides formed after bombardment. It is turned out that the impurities within the samples as O_2 and Ar can affect the formation of Pt-silicides.
出处
《北京师范大学学报（自然科学版）》
CAS
1985年第4期40-44,共5页
Journal of Beijing Normal University(Natural Science)
