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AlGaN/GaN HEMT器件结构退化影响因素的研究现状 被引量：1

Study State of the Influence Factors for Structural Degradation of AlGaN/GaN HEMTs
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摘要 AlGaN/GaN高电子迁移率晶体管(HEMT)器件由于高压、大功率等应力条件导致的电学退化过程中往往伴随着结构退化现象产生,结构退化研究对提高器件可靠性起着重要的作用。介绍了近年来国外在高压、大功率、高温、加压时间及辐射等不同因素对GaNHEMT器件结构退化的影响方面的研究进展。发现GaNHEMT器件的栅边缘下方出现的凹点和裂纹等结构缺陷是高压、大功率、高频等许多应力条件下都会出现的普遍现象,且凹点和裂纹的退化程度随电学退化程度的加深而加大,并导致器件的可靠性下降。GaNHEMT器件结构退化现象的本质以及改进措施将是未来研究的重点。 Structural degradation phenomena always occurs with electrical degradation of Al Ga N /Ga N high electron mobility transistors（ HEMTs） under high voltage or high power stress conditions,and the study of the structural degradation may play an important role in improving reliability of Ga N HEMTs. The recent research progress of foreign countries in understanding the influence factors for structural degradation of Ga N HEMTs such as high voltage,high power,high temperature,stress time and strong radiation is introduced. The pit and crack damages at gate edges of Ga N HEMTs are universal phenomena under many stress conditions,and the degradation degree of crack and pit damages correlates with electrical degradation degree,which may induce reliability decline of devices. The nature and improvement of structural degradation of Ga N HEMTs will be the research focus in the future.
作者 付兴中 赵金霞 崔玉兴 付兴昌
机构地区 中国电子科技集团公司第十三研究所
出处 《半导体技术》 CAS CSCD 北大核心 2016年第3期161-168,197,共9页 Semiconductor Technology
关键词 GaN高电子迁移率晶体管(HEMT) 可靠性 结构退化 电学退化 凹点 裂纹 GaN high electron mobility transistor（HEMT） reliability structural degradation electrical degradation pit crack
分类号 TN386 [电子电信—物理电子学]
作者简介 E-mail：727278243@qq．com付兴中（1983-），男，山东菏泽人，硕生，工程师，主要研究方向为化合物半导体功率器件工艺开发。
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参考文献43

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二级参考文献11

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半导体技术
2016年 第3期

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