摘要
提出一种改进的增强型GaN HEMT器件建模大信号模型。模型沟道电流方程和电荷方程均连续且高阶可导,栅电荷模型满足电荷守恒原则。提出的沟道电流模型可精确拟合实际器件正、反向区、截止区以及亚阈值区的直流特性。根据GaN HEMT器件特有的物理结构和电学特性,器件的自热效应、电流崩塌效应以及跨导频率分布效应在模型中进行了考虑。模型采用Verilog-A语言进行描述,并编译、链接入Agilent ADS工具。验证结果表明,模型仿真和测试数据在宽的偏压和频率范围内得到很好地吻合。
An improved large-signal model for the enhancement mode（ E-mode） Ga N HEMTs modeling was presented. Both the equations for channel current and gate charge models were all continuous and high order drivable,and the proposed gate charge model satisfied the charge conservation. The channel current model could fit DC performance of devices,such as the positive,negative,cut-off and sub-threshold region. According to the specific physical structure and electrical properties of Ga N HEMT devices,the self-heating,current collapse and the trans-conductance dispersion effects were considered in the model development. The model was compiled and linked into Agilent ADS tools for simulation by using Verilog-A language. The model prediction shows excellent agreement between the data from both simulation and measurement over a wide bias conditions and frequency range.
出处
《半导体技术》
CAS
CSCD
北大核心
2015年第12期904-910,共7页
Semiconductor Technology
作者简介
陈秋芬（1990-），女，浙江温州人，硕士研究生。主要研究方向为GaN器件建模；
通信作者：李文钧，E-mail：liwenjun@hdu．edu．cn.李文钧（1977-），男，浙江富阳人，副教授，博士，硕士生导师，主要研究方向为RF／MMIC设计及物联网技术等。
