摘要
以微米h-BN和TiB2为主要原料,以微米Y2O3、AlN以及Si3N4为添加剂,采用热压烧结工艺制备了氮化硼基电器用导电陶瓷材料,并分析了烧结样品的体积密度、弯曲强度、硬度以及导电性能。结果表明,当微米h-BN添加量为48wt%,TiB2为16wt%,Y2O3为4wt%,Al N为16wt%,Si3N4为16wt%时,所制备的导电陶瓷材料性能最佳,体积密度2.69 g·cm-3,弯曲强度139.5 MPa,硬度199.7 kgf/mm2,电阻率为595μΩ·cm。
Boron nitride based conductive ceramic was fabricated with hot-pressing sintering technique by using micro h-BN and TiB2 as main material and Y2O3,Al N and Si3N4 as additives. The properties of bulk density,flexural strength,hardness and conductive property were tested. The results show that when the content of micro h-BN is 48wt%,Ti B2is16wt%,Y2O3 is 4wt%,AlN is 16wt% and Si3N4 is 16wt%,the prepared boron nitride based material can achieve the best properties. The bulk density,flexural strength,hardness and conductive property of boron nitride based conductive ceramic is2.69 g·cm-3,139.5MPa,199.7 kgf/mm2 and 595 μΩ·cm,respectively.
出处
《热加工工艺》
CSCD
北大核心
2015年第18期111-114,共4页
Hot Working Technology
基金
吉林省职业技术教育学会科研规划课题(SZJ2014079)
关键词
微米h-BN
微米TiB2
晶界相
热压烧结
导电性能
micro h-BN
micro TiB2
grain boundary phase
hot-pressing sintering
conductive properties
作者简介
方振龙（1976-），男，吉林梅河口人，副教授，从事电气化及轨道交通技术；E-mail：252225345@qq．com
