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Co^(2+)掺杂Zn_2SiO_4结晶釉生长机理的研究 被引量:5

Study on the Growth Mechanism of Co^(2+) Doped Zn_2SiO_4 Crystalline Glaze
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摘要 以高岭土、石英、钠长石、石灰石、氧化锌等矿物为原料,Zn O为晶核剂,并掺杂Co2+控温烧结Zn2Si O4结晶釉。利用X射线衍射仪(XRD)分析样品物相,白度色差计测量釉料色度(L*、a*、b*),EDS能谱仪分析样品组成含量。采用Johnson-Mehl-Avrami(JMA)方程对釉的结晶动力学进行分析,探讨釉中晶体的生长机理。结果表明:高温时Co2+置换了Zn2Si O4结晶釉中的Zn2+。随着保温时间的延长,掺杂了Co2+的Zn2Si O4晶体颗粒不断长大,在1140℃下保温170 min晶花达到最大,其晶花面积均值为410.91 mm2。模拟动力学分析,釉中晶体的Avrami指数n1100℃=0.82,n1140℃=1.23,n1180℃=1.12,表明晶体的形成由扩散机制向成核机制转变。拟合Arrhenius方程,晶体的活化能Ea=148.2 k J/mol。 Co^2+ doped Zn2SiO4 crystalline glaze with ZnO as a nucleation agent was prepared using quartz, albite, limestone, kaolin, zinc oxide and other minerals as raw materials by controlling the sintering temperature. The crystal structure of the samples was analyzed by X-ray diffraction (XRD). The chromatic value (L * 、 a * 、 b * ) of the samples was studied by colorspec. The sample content was measured by Energy Dispersive Spectrometer(EDS). The mechanism of Co^2+ doped ZnESiO4 crystal growth was studied by JMA equation, which helps investigate the growth kinetics of sample crystal. The results reveal that Co^2+ ions will substitute the Zn^2+ ions in the ZnESiO4 crystalline glaze at high temperature. Co^2+ doped Zn2SiO4 crystal becomes greater in size with the extention of soaking time and reaches the maximum value when the soaking time was 170 min at 1140 ℃. The maximum areas value is 410.91 mm2. The Avrami exponents of crystal are n1100℃ =0.82, n1140℃= 1.23, n1180℃ = 1. 12, respectively. It reveals the formation of crystals have a trend from diffusion mechanism to the nucleation mechanism. The sample activation energy En is 148.2 kJ/mol through Arrhenius equation.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2015年第7期1855-1860,共6页 Journal of Synthetic Crystals
基金 国家自然科学基金(91022027) 江西省自然科学基金(20133ACB20002 20132BAB202002 20122BAB202001 20122BAB203019) 江西省高等学校"先进陶瓷材料"科技创新团队
关键词 Zn2SiO4 结晶釉 动力学 JMA方程 ZnESi04 crystalline glaze crystallization kinetics JMA equation
作者简介 徐新民(1989-),男,江西省人,硕士研究生。E-mail:xuxinmin0920@163.com 江向平,教授,博士。E-mail:jiangxp64@163.com
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