摘要
在此基于SMIC 0.18μm CMOS工艺，设计一种高精度低温漂的低压基准电压源。该基准源的供电电源电压为1.8 V，输出电压为1.0 V，电路的总电流小于5μA。在-40～80℃范围内的温度系数为5.7 ppm/℃。当频率在100 kHz以内时，电源抑制比始终保持在-75 dB以下。该基准电压源具有低功耗、低温度系数、高电源抑制的特性，能够很好地应用于低压供电的集成电路设计中。
A highaccuracy low voltage reference with low temperature drift is designed in this paper based on SMIC 0.18 μm CMOS process. Its power supply is 1.8 V and output voltage is 1.0 V. The total current in its circuit is less than 5 μA. The temperature coefficient is 5.7 ppm/℃ under the condition of operation temperature at 40oC-80 oC. The PSRR is less than 75 dB when the frequency is lower than 100 kHz. This reference has the characteristics of low power consumption,low temperature coefficient and high PSRR,and can be used in design of integrated circuits with lowvoltage power supply.
出处
《现代电子技术》
北大核心
2015年第12期123-125,共3页
Modern Electronics Technique
关键词
电压基准源
带隙基准源
温度系数
电源抑制比
voltage reference
bandgap reference
temperature coefficient
power supply rejection ratio
作者简介
李惊东（1972-），男，浙江人，硕士，高级工程师。研究方向为传动装置测控技术、电子科学与技术。
