摘要
报道1种在垂直远场方向上产生2个极窄的稳定对称光斑多量子阱边发射半导体激光器,在其有源区两侧设计布拉格反射波导结构.制备100μm条宽的边发射激光器,在垂直方向±33.4°附近实现2个稳定的7.2°对称的近圆形光斑,对器件镀膜后进行测试,在连续和脉冲工作条件下分别得到1.40,2.26 W的输出,器件的特征温度可达到91K.
A multiple quantum wells edge-emitting semiconductor laser which can generate twin ultra-narrow,stable and symmetrical beams in the far field vertical direction was designed and fabricated.The Bragg reflection waveguide structure was designed on both side of the active layer.Laser with 100μm stripe width exhibited two stable near-circular beams symmetrically located at about±33.4°with full-width at half maximum of 7.2°in the vertical direction.Texting the laser after coating,which showed an output power of 1.40 W under continuous wave operation and 2.26 Win pulsed mode.The characteristic temperature of the device is about 91 K.
出处
《华侨大学学报（自然科学版）》
CAS
北大核心
2015年第2期151-155,共5页
Journal of Huaqiao University(Natural Science)
基金
集成光电子学国家重点联合实验室开放课题(IOSKL2012KF12)
半导体材料科学重点实验室开放课题(KLSMS-1201)
福建省泉州市科技计划重点项目(2003Z19)
关键词
半导体激光器
布拉格反射波导
双光斑激光器
多量子阱
semiconductor lasers
Bragg reflection waveguide
twin-beam lasers
multiple quantum wells
作者简介
王加贤（1955-），男，教授，博士，主要从事激光与光电子技术的研究．E-mail：wangjx@hqu．edu．cn．
