摘要
Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into account a variety of scattering mechanisms,including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-x Gex/(100)Si also decreases obviously with increasing Ge fraction(x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-x Gex/(100) Si decreases by about 58%.
Based on the Fermi＇s golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate（SR） in strained Si1-x Gex/（100）Si was presented, which takes into account a variety of scattering mechanisms,including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-x Gex/（100）Si also decreases obviously with increasing Ge fraction（x）. Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-x Gex/（100） Si decreases by about 58%.
基金
Project(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of China
Project(P140c090303110c0904)supported by NLAIC Research Fund,China
Projects(K5051225014,7214608503)supported by the Fundamental Research Funds for the Central Universities,China
作者简介
Corresponding author： WANG Bin, PhD; Tel： ＋86-15991773340; E-mail： wbin@xidian.edu.cn
