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La掺杂对ZnO纳米薄膜微观结构与光学特性的影响 被引量:1

Influence of La Doping on the Microstructures and Optical Properties of ZnO Thin Films
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摘要 采用射频磁控溅射方法在Si衬底上制备了不同掺杂量的La掺杂ZnO(ZnO∶La)薄膜。用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计和光致荧光发光(PL)等表征技术,研究了不同掺杂量对ZnO∶La薄膜的微观结构和光学特性的影响。结果表明,所有薄膜均只出现的(002)衍射峰,表明La3+可以替代Zn2+或者进入ZnO晶格间隙,并未改变ZnO的六角纤锌矿结构。通过计算可知La掺杂可以抑制ZnO的晶粒增长。可见光范围的透过率超过80%,同时随着La掺杂量的增加,薄膜的光学带隙值逐渐增大。通过对光致发光谱的研究表明,La掺杂可以增强ZnO薄膜室温下的紫外光发光强度。 The La-doped ZnO(ZnO∶ La) films with different La doping concentrations were deposited on Si substrates using the radio frequency reactive magnetron sputtering technique. The effect of La contents on the crystalline structure and optical properties of ZnO∶ La thin films were investigated by the X-ray diffraction( XRD),scanning electronic microscopy( SEM),ultraviolet-visible spectrophotometer and fluorescence Spectrophotometer. Only the(002) diffraction peak of the hexagonal wurtzite ZnO structure was presented,It indicates that La atoms have been incorporated into the ZnO matrix,do not change the wurtzite structure of the ZnO films. The La doping probably limit the grain growth by evaluated. All films have an average optical transparency over 80% in the visible range,meanwhile the optical band gaps of films increases with increasing La doping concentration. The results of photoluminescence show that the luminous intensity of ultraviolet light of ZnO thin films at room temperature can enhance with La doping.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2014年第8期1948-1953,共6页 Journal of Synthetic Crystals
基金 甘肃省自然科学基金(1308RJZA258) 西北师范大学大学生科研资助基金
关键词 ZnO∶La薄膜 微观结构 光学带隙 磁控溅射 ZnO∶ La thin film microstructure optical band gap magnetron sputtering
作者简介 朱婧(1990-),女,甘肃省人,硕士研究生。E—mail:401112005@163.com
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