期刊文献+

ZnS纳米薄膜的负微分电阻和记忆特性

Negative Differential Resistance and Memory Characteristics of ZnS Nano-Films
在线阅读 下载PDF
导出
摘要 通过激光分子束外延(LMBE)和热蒸发技术制备了基于ZnS纳米薄膜的Al/ZnS/ITO/玻璃器件,通过原子力显微镜(AFM)对ZnS表面薄膜形貌进行表征,采用Keithley 2400测量其电学特性,分别研究了扫描电压、ZnS薄膜厚度及不同温度的退火处理对器件电学特性的影响。实验结果表明:在不同的扫描电压作用下,器件均表现出稳定的负微分电阻特性,且其阻值随扫描电压的变化呈现出高低电阻两种状态,器件具有明显的记忆特性。适当减小ZnS薄膜的厚度或对器件进行400℃退火处理,均可有效减小低阻态的阻值,提高器件的峰-谷电流比率,进而优化器件的记忆特性。最后,基于能谷散射理论,对器件的负微分电阻特性进行了合理解释,理论和实验结果吻合较好。 The A1/ZnS/ITO/glass devices based on the ZnS nano-films were fabricated by laser molecular beam epitaxy (LMBE) and thermal evaporation technology. The surface morphology of the ZnS thin films was characterized by atomic force microscope (AFM), and the electrical properties were measured by Keithley 2400. The effects of the sweep voltages, thicknesses of ZnS films and different annealing temperatures on the electrical properties of the fabricated devices were investigated. The experimental results show that the fabricated devices exhibit the stable negative differential resistance characteristics under the different sweep voltages, and the resistance state can be switched sequentially between high and low resistive states with the sweep voltage. The devices have obvious memory characteristics. In addition, the appropriate decrease of the ZnS film thickness and the annealing operation at 400℃ can effectively decrease the resistance in the low resistive state and increase the peak-valley current ratio, and then optimize the memory characteristics of the devices. Finally, Based on the inter-valley scattering theory, the negative differentialresistance characteristics of the devices was explained reasonably. And the experiment results agree well with the theory.
出处 《微纳电子技术》 CAS 北大核心 2014年第7期419-424,共6页 Micronanoelectronic Technology
基金 国家自然科学基金资助项目(11375081) 山东省自然科学基金资助项目(ZR2012FM026 ZR2012FL20)
关键词 ZnS纳米薄膜 负微分电阻 记忆特性 退火温度 能谷散射 ZnS nano-film negative differential resistance memory characteristic annealingtemperature inter-valley scattering
作者简介 秦书超(1988-),男.山东莘县人.硕士研究生.主要从事记忆电阻方面的研究: 董瑞新(1965-),女,山东阳符人.博士。教授,硕士生导师,主要从事纳米电子学的理论和实验研究.曾获山东省高等学校优秀科研成果三等奖,山东省教育厅科学进步三等奖等.先后主持国家自然科学基金项目1项。山东省自然科学基金项目1项.作为主要研究人员参与并完成国家自然科学基金项目3项.山东省自然科学基金项目2项。目前主持承担山东省自然科学基金项目1项。
  • 相关文献

参考文献1

二级参考文献2

共引文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部