摘要
以硫脲为硫源,采用燃烧法制备了Zn0.5Cd0.5S:Eu3+半导体材料.研究了Eu掺杂量对Zn0.5Cd0.5S:Eu3+半导体材料的结构,形貌,固体漫反射以及发光性能的影响.利用X-射线粉末衍射仪(XRD),扫描电子显微镜(SEM),紫外-可见分光光度计(UV-vis)和荧光分光光度计(PL)对样品进行了表征.结果表明:Eu掺杂量对样品的结构和形貌没有明显的变化,但对其发光性能却有着显著地影响.当Eu掺杂量为3%时所制备的Zn0.5Cd0.5S:Eu3+半导体材料的发光性能为最强.
Zn0.5Cd0.5S∶Eu3＋ semiconductor materials were synthesized by a combustion method, using the thiourea as the sulfur source. The as-synthesized samples were characterized by X-ray powder diffraction （XRD）, Scanning electron microscopy （SEM）, ultraviolet-visible spectrophotometer （UV- vis） and fluorospectro photometer. The influences on the structure, morphology, UV-vis absorption and photoluminescence properties of Zn0.5Cd0.5S∶Eu3＋ with different doping amount of Eu were studied. The results show that doping amount of Eu has no significant effect on the structure and morphology of samples. However, when the doping amount of Eu is 3o//00, it exhibits the enhanced photoluminescence performance.
出处
《聊城大学学报（自然科学版）》
2014年第2期56-59,共4页
Journal of Liaocheng University:Natural Science Edition
基金
国家自然科学基金(51002069)
聊城大学大学生科技文化创新基金(SF2013032)
作者简介
通讯作者：张大凤，E—mail：zhangdafeng@lcu．edu．cn．
