摘要
研究纳米 Ti O2 薄膜的导电性与薄膜厚度和基底材料的关系 .结果表明 ,沉积在 Ti和Si基底上的 Ti O2 薄膜的电阻率随着膜厚的增加而非线性增大 ,分别经历了导体、半导体到绝缘体或半导体到绝缘体的电阻率范围的变化过程 ,Ti O2 薄膜导电层厚度也不相同 ,沉积在玻璃表面 Ti O2 薄膜为绝缘体 .这些现象是界面电子在界面的转移所致 。
The present paper presents the dependence of the conductivity of TiO 2 thin films on the different substrates and on the thickness of the films. It was found that the resistivity of the TiO 2 thin films deposited on Ti and Si substrates increased non-linearly with the increase of the thickness of the films and varied in the range from conductor or semiconductor to nonconductor, respectively. The conducting layer thickness of the films deposited on different substarte materials is different and the films deposited on glass are nonconductors. This is attributed to interface electrons transfer, and the conducting layer thickness is determined by the work function difference between substrates and thin films.
出处
《吉林大学学报（理学版）》
CAS
CSCD
北大核心
2002年第3期273-275,共3页
Journal of Jilin University:Science Edition
基金
国家自然科学基金 (批准号 :5 98310 40 )
