摘要
利用电共沉积技术,在简单盐和带有络合剂的盐酸溶液中,制备了AlxGa1-xAs三元化合物薄膜。用能谱分析仪测量了薄膜成分,分析结果表明,该膜为符合化学计量比的三元化合物AlxGa1-xAs半导体材料,用分光光度计对膜进行测量,在较宽光波波段获得一定的透射率。
Tri-compound AlxGa1-xAs films was prepared by using electrodeposition technology in simple salt solution with additives citric acid. The composition of the deposited films was measured by SEM-EDS. The result shows that approximately stoichiometric Al0.3Ga0.7As tri-compound semicon- ductor materials is obtained. As the films are measured by spectrophotometer, certain transmissivity is obtained in a wide range of light wave band.
出处
《功能材料与器件学报》
CAS
CSCD
2002年第1期13-17,共5页
Journal of Functional Materials and Devices
