摘要
在制造快速晶闸管的过程中电子辐照已被广泛采用 ,但是 ,电子辐照在提高开关速度的同时 ,也会引起正向导通压降的增大。采用高能质子辐照既能提高开关速度又能尽量降低正向导通压降。由于一定能量的质子在物质中的射程是一定的 ,质子辐照造成缺陷或复合中心分布在一定的狭窄区域 ,在那里 ,缺陷可以有效地增加开关速度又不显著增加导通压降。本文介绍用HI- 13串列加速器产生的质子束辐照晶闸管的工作。实验表明 ,双能量质子束的辐照效果是非常优越的。
Irradiating by electron beams has been widely adapted in the fabrication of fast switching power thyristors. However, accompanying beneficial reduction in switching speed there is a deleterious increase in forward voltage drop. Methods which minimize the voltage drop increase as the switching speed is reduced are highly desirable, one such method would achieve this by introducing the traps or recombination centers into well defined narrow regions where they will be more effective in reducing the switching speed than in increasing the forward voltage drop. Because the proton rang-energy relationship is relatively well defined, such kind of well defined narrow region can be formed by the precise control of irradiation proton energy. Dual energy proton beams from the HI-13 tandem accelerator were used in the experiments. The results indicate that this is a preferred technique for processing fast switch thyristors with superior characteristics.
出处
《核技术》
CAS
CSCD
北大核心
2002年第2期86-88,共3页
Nuclear Techniques
