摘要
给出了高倍增 SI-Ga As光电导开关中在临界光能、电场阈值触发条件下的瞬态光激发电荷畴现象的实验结果 ,进一步讨论了生成畴的光、电阈值条件 ,提出用类似于耿畴的单电荷畴的物理模型来描述高倍增 Ga As光电导开关中的 L ock-on效应。分析了单电荷畴的形成和辐射发光的物理过程 ,并对 L
This paper reports the experiment results of optically activated transient charge domain in the high gain semi insulating GaAs photoconductive switches operated under the critical conditions of optical and electrical threshold which are required for the high gain mold.These conditions for optical and electircle threshold generoting domains are deeply discussed;and the physical model of the monopole charge domain similar to the Gunn domain is proposed to explain the Lock on effect.The typical phenomena in high gain switches are interpreted by introducing the mechanism of the domain luminescence and regeneration.
出处
《西安理工大学学报》
CAS
2001年第2期113-116,共4页
Journal of Xi'an University of Technology
基金
国家自然科学基金资助项目 (50 0 770 1 7)
