摘要
用 X射线双晶衍射 ( XDCD)法测得分子束外延 ( MBE)法生长的 Cd Te/ Cd0 .959Zn0 .0 4 1 Te( 112 ) B异质结的倾斜角为 0 .2 185°,而且朝 [1- 1- 1]晶体学方向倾斜 .为了获得较精确的倾斜角值 ,绘制了外延层和衬底衍射角的差值Δθ与绕样品表面法线旋转的角度 之间的准正弦函数 .为高分辨率透射电子显微镜 ( HRTEM)分析制备了 MBE法生长的 Hg0 .535Cd0 .4 6 5Te/ Cd Te/ Ga As( 1- 12 ) B多层异质结的横截面薄膜 .Cd Te/ Ga As异质结的 HRTEM明场象表明 Cd Te( 1- 12 )缓冲层相对于 Ga As( 1- 12 )衬底朝 [1- 11- ]方向倾斜约 3°,并且在 Hg0 .535Cd0 .4 6 5Te/ Cd Te异质结 ,Hg0 .535Cd0 .4 6 5Te( 1- 12 )外延膜相对于 Cd Te( 1- 12 )缓冲层在 [11- 1]方向 ,即 [1- 11- ]的反方向倾斜约 1°.也分析了 Hg0 .535Cd0 .4 6 5Te/ Cd Te/ Ga As多层膜之间的倾斜角关系 .
A tilt in the [ 1 DD(-*2-DD) 1 DD(-*2-DD)1] crystallographic direction, and a tilt angle of 0 21850° were determined by XDRD (X-ray double crystal diffraction) in a CdTe/Cd 0 959 Zn 0 041 Te (112) B heterojunction grown by means of MBE (molecular beam epitaxy), and a quasi-Sine function between the rotation angle φ around sample surface normal and the diffraction angle difference Δ θ was drawn in order to obtain optimal data. A special oriented cross section of Hg 0 535 Cd 0 465 Te/CdTe/GaAs ( 1 DD(-*2-DD)12) B multilayer grown by MBE was prepared for HRTEM (high resolution transmission electron microscopy) determination, and the HRTEM images show that the buffer layer CdTe ( 1 DD(-*2-DD)12) relative to the substrate GaAs ( 1 DD(-*2-DD)12) is inclined by about 3° towards the [ 1 DD(-*2-DD)1-*4 1 DD(-*2-DD)] orientation at the CdTe/GaAs heterojunction, and that the epilayer Hg 0 535 Cd 0 465 Te ( 1 DD(-*2-DD)12) relative to the buffer layer CdTe ( 1 DD(-*2-DD)12) is inclined by about 1° towards the [1-*4 1 DD(-*2-DD)1] orientation, in the opposite direction of [ 1 DD(-*2-DD)1-*4 1 DD(-*2-DD)] at the Hg 0 535 Cd 0 465 Te/CdTe heterojunction. The relationship of the tilt angles at the Hg 0 535 Cd 0 465 Te/CdTe/GaAs multilayer was also analyzed.
出处
《应用科学学报》
CAS
CSCD
2001年第3期261-264,共4页
Journal of Applied Sciences
