摘要
为了在光开关器件的制作中实现低传输损耗的光波导 ,对InGaAs/InGaAsP分别限制异质结多量子阱 (SCH MQW )激光器结构进行了一系列带隙蓝移实验 .将能量 12MeV、注量 15×10 13cm- 2 的P+注入到实验样品后 ,在 70 0℃下快速热退火 90s.发现光致发光谱的峰值位置发生蓝移 989nm .蓝移量随着注入能量和注量的增大而增大 ,并且能量比注量对蓝移的影响更大 .
A very successful technique that uses phosphorus ion implantation to enhance the interdiffusion of QW in InP based laser structure is described. The implanted ions create a large number of vacancies, which diffuse through the QW region upon annealing. The interdiffusion of both column Ⅲ and column Ⅴ atoms at the interface between barrier and QW layers takes place. Room-temperature photoluminescence (PL) spectra are obtained from the samples. PL emission peaks of the samples vary with dose and energy of implantation. PL spectrum are blue-shifted in wavelength from 9 nm to 89 nm. This reproducible technique of lateral band-gap control can be used in quantum-well photonics integrated circuits to produce low-loss waveguide.
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
北大核心
2001年第2期170-173,共4页
Journal of Beijing Normal University(Natural Science)
基金
国家自然科学基金!资助项目 (6 9786 0 0 1)
北京新星计划资助!项目 (95 2 870 30 0 )
