摘要
提出一种采用化学气相沉积工艺进行大面积单晶结构石墨烯岛的可控制备方法。在Ar环境中通过控制退火时间、生长温度来控制石墨烯岛的成核密度和生长形态;采用FeCl3溶液对衬底表面预处理并调控H2与CH4的流量比来改善石墨烯岛的分形;延长生长时间来扩大单晶石墨烯岛尺寸。实验结果表明:该制备方法可以控制石墨烯具有四边形、六边形、搭叠形等不同形态,可以控制四边形石墨烯由狭长型、燕翅型、蝴蝶型最终过渡到饱满的无分形结构的正方形形态,可以将六边形石墨烯岛尺寸从几十微米扩大到200微米以上,并且得到双层搭叠型六边形石墨烯;采用该方法生长出来的单晶石墨烯可以避免连续多晶石墨烯的边界散射效应,保持较高的迁移率,且尺寸较大,具有单原子层结构和不同的生长形态,解决了集成电路所需要的百微米以上量级的单晶结构、晶格取向一致的石墨烯的制造问题。
A controllable preparation method for synthesizing hundreds of micro-sized singlecrystal grapheme is proposed by regulating the process of chemical vapor deposition.Nucleation density and morphology of graphene is controlled by annealing time and temperature in Ar atmosphere.Fractal structure of grapheme is improved by using substrate pretreatment by FeC13 and controlling ratio of H2 and CH4 flows,and the size of graphene is increased by extending growth time.Experimental results show that the proposed method could control the graphene with different structure such as quadrilaterals,hexagons,and stacks.Quadrilateral graphene could be controlled from fractal structure with narrow,swallow wings,or butterfly to non-fractal structure in square.The size of hexagon graphene can be increased from dozens of micron to more than 200 microns,and stacked graphene is obtained.It is expected that graphene with single atomic layer structure and high charge carrier mobility will solve the integrated circuits problem for hundred micron scale single crystal graphene with consistent lattice orientations.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
2014年第6期103-109,共7页
Journal of Xi'an Jiaotong University
基金
国家自然科学基金资助项目(91123018
61172041
61172040)
关键词
石墨烯
纳米晶体管
集成电路
可控制备
双层搭叠
graphene
nano-scale transistor
integrated circuit
controllable preparation
stacking
作者简介
李昕（1968-）,女,副教授
刘卫华（通信作者）,男,副教授.
