摘要
There have been continuous efforts to seek novel functional two-dimensional semiconductors with high performance for future applications in nanoelectronics and optoelectronics. In this work, we introduce a successful experimental approach to fabricate monolayer phosphorene by mechanical cleavage and a subsequent Ar＊ plasma thinning process. The thickness of phosphorene is unambiguously determined by optical contrast spectra combined with atomic force microscopy （AFM）. Raman spectroscopy is used to characterize the pristine and plasma-treated samples. The Raman frequency of the A2g mode stiffens, and the intensity ratio of A2g to Alg modes shows a monotonic discrete increase with the decrease of phosphorene thickness down to a monolayer. All those phenomena can be used to identify the thickness of this novel two-dimensional semiconductor. This work on monolayer phosphorene fabrication and thickness determination will facilitate future research on phosphorene.
基金
Acknowledgements The authors would like to thank Prof. Wei Ji from Renmin University for his kindness in sharing with us the unpublished results on the electronic structure calculations of black phosphorus, Prof. Pingheng Tan for his guidance on early Raman characterization, and Dr. Shuo Ding on her assistance with obtaining the optical image used in TOC. This work is financially supported by the National Natural Science Foundation of China （Nos. 51222202, 11104026, and 61376104）, the National Basic Research Program of China （No. 2014CB932500） and the Program for Innovative Research Teams in Universities of the Ministry of Education of China （No. IRT13037） and the Fundamental Research Funds for the Central Universities （No. 2014XZZX003-07）.
作者简介
correspondence to Zhenhua Ni, zhni@seu.edu.cn;correspondence toChuanhong Jin, chhjin@zju.edu.cn
