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基于GaAs电感模型的微波功率放大器 被引量：2

Microwave power amplifier design based on GaAs inductance model
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摘要 基于0.15μm砷化镓（GaAs）工艺建立一种电感模型,并用高频结构模拟器（High Frequency Structure Simulator,HFSS）仿真验证,并在此基础上设计一种微波功率放大器,并用高级系统设计软件（Advanced Design System,ADS）进行仿真。仿真结果显示在8～12GHz频率范围内,饱和输出功率大于21.9dBm,1dB压缩点输出功率大于20dBm,功率增益大于26dB,功率附加效率大于34%,稳定系数大于1。 In this paper an inductor model is built based on 0.15μm GaAs technology and its accuracy is tested by HFSS.8～12GHz microwave power amplifiers with ADS simulation are further designed.Simulation results show that within the frequency range of 8～12GHz the saturated output power is greater than 21.9dBm,1dB compression point output power greater than 20 dBm,the power gain better than 26dB,power added efficiency more than 34%and the stability factor greater than 1.
作者 阴亚芳 张虹 张博 李迎春
机构地区 西安邮电大学电子工程学院 西安通信学院基础部
出处 《西安邮电大学学报》 2014年第2期94-97,共4页 Journal of Xi’an University of Posts and Telecommunications
关键词 微波功率放大器 GaAs基底 电感模型 共源共栅结构 microwave power amplifier GaAs substrate inductor model cascode topology
分类号 TN925.1 [电子电信—通信与信息系统]
作者简介 阴亚芳（1966-），女，教授，从事数字信号处理及光通信技术研究。E-mail：yinyf@xupt．edu．cn 张虹（1989-），女，硕士研究生，研究方向为通信电路与系统。E-mail：121324128@qq．com
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参考文献14

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二级参考文献9

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共引文献13

同被引文献28

  • 1戴永胜,方大纲.GaAs MMIC开关MESFET电路建模技术研究[J].南京理工大学学报,2006,30(5):612-617. 被引量：5
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  • 3戴永胜,陈曦,陈少波,等.微波毫米波超宽带低相移6位数字衰减器,中国,CN102055427A[P].2011.
  • 4庄奕琪,李振荣,张岩龙,等.硅基高线性度低相移超宽带数字衰减器,中国,CN103427781A[P].2013.
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引证文献2

二级引证文献4

西安邮电大学学报
2014年 第2期

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