摘要
CZSi中掺入等价元素锗 ,能影响低温退火时氧沉淀过饱和成核的成核速率与密度。在70 0℃退火时 ,抑制杆状氧沉淀的生成 ,在 90 0℃退火时 ,锗对氧沉淀的形态和长大几乎没有影响。实验表明 ,锗并不作为氧沉淀的成核中心 ,氧沉淀及其衍生的二次缺陷中也不包含锗。文中对锗影响氧沉淀的成核与形态进行了简要的讨论。
Doped in CZSi, Ge affects the coring rate and density of oxygen precipitation. Formation of rod like oxygen precipitation has been suppressed in CZSi doped with Ge, after annealing at 700℃. Ge can not affect the shape and growth of oxygen precipitation at 900℃ heat treatment. It is indicated that Ge can not act as core center of oxygen precipitation and Ge is not involved in precipitation and its secondary defects. In this paper, the influences of Ge on oxygen precipitation coring and the shape has been discussed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2001年第1期92-96,共5页
Research & Progress of SSE
基金
国家自然科学基金(编号:59772037)
河北省自然科学基金资助项目(编号:594061)
关键词
直拉单晶硅
氧沉淀
锗
CZSI
沉淀形态
CZSi
oxygen precipitation
coring
doping (Ge)
heat treatment
