摘要
The movement of Cu in a HfO2-based resistive random access memory （RRAM） device is investigated in depth by first-principle calculations. Thermodynamics analysis shows that the dominant motion of Cu tends to be along the [001] orientation with a faster speed. The migration barriers along different routes are compared and reveal that the [001] orientation is the optimal migration route of Cu in HfO2, which is more favorable for Cu transportation. Furthermore, the preferable HfOz growth orientation along [100], corresponding to Cu migration along [001], is also observed. Therefore, it is proposed that the HfO2 material should grow along [100] and the operating voltage should be applied along [001], which will contribute to the improvement of the response speed and the reduction of power consumption of RRAM.
The movement of Cu in a HfO2-based resistive random access memory （RRAM） device is investigated in depth by first-principle calculations. Thermodynamics analysis shows that the dominant motion of Cu tends to be along the [001] orientation with a faster speed. The migration barriers along different routes are compared and reveal that the [001] orientation is the optimal migration route of Cu in HfO2, which is more favorable for Cu transportation. Furthermore, the preferable HfOz growth orientation along [100], corresponding to Cu migration along [001], is also observed. Therefore, it is proposed that the HfO2 material should grow along [100] and the operating voltage should be applied along [001], which will contribute to the improvement of the response speed and the reduction of power consumption of RRAM.
基金
supported by the National Natural Science Foundation of China(No.61376106)
作者简介
Email： daiyuehua2013@ 163.com
