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钛宝石泵浦Cr,Nd:YAG微片的自调Q激光特性 被引量:1

Ti:Sapphire Laser Pumped Cr^(4+),Nd^(3+):YAG Self-Q-Switched Microchip Laser
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摘要 用连续的钛宝石激光泵浦1mm厚的 Cr4+,Nd3+:YAG晶体微片获得了1.064μm的自调Q激光输出.输出的激光调Q脉冲非常稳定,泵浦的阈值功率为30mW,脉冲宽度为100ns,随着泵浦功率的变化,脉冲宽度保持不变,而重复率则在变化.斜率效率随着输出耦合镜透过率的变化而变化。当输出耦合率为5%时,斜率效率高达20%.这一研究有助于进一步发展激光二极管泵浦的全固化的自调Q微片激光器. Using a Ti:sapphire laser as the pumping source in the CW mode, the self-Q-switched laser in the co-doped Cr4+,Nd3+:YAG microchip with 1mm thickness was demonstrated. The output Q-switched traces are very stable, the threshold pumping power is as low as 30 mW, the pulse duration is as short as 100 us. And the pulse width keeps constant and pulse repetition rate is varied with the variation of the pumping power. The slope efficiency is varied with the transmission of output coupler at 1064nm, and the slope efficiency is as high as 20% for 5% transmission of output coupler at 1064nm. This can lead to develop the diode laser pumped monolithic self- Qswitched solid-state microchip lasers.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2001年第1期139-142,共4页 Journal of Inorganic Materials
基金 国家自然科学基金!998806 863-416项目资助
关键词 YAG晶体 自调Q激光 微片激光器 钛宝石激光器 铬离子 钕离子 Cr,Nd:YAG crystal self-Q-switched microchip laser Ti:sapphire laser
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参考文献4

  • 1Kuo Y K,IEEE J Quantum Electron,1995年,31卷,657页
  • 2Chen W,Opt Commun,1993年,104卷,71页
  • 3Spariosu K,Opt Lett,1993年,18卷,814页
  • 4Zhou S,Opt Lett,1993年,18卷,511页

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