摘要
采用射频等离子体增强化学气相沉积(RF-PECVD)技术,对P/I/N型单结非晶硅锗电池进行研究。通过优化溅射后腐蚀ZnO∶Al衬底的横纵向尺寸,改善其光散射特性,可有效提升非晶硅锗电池的长波响应。针对恒定梯度的非晶硅锗电池填充因子差的问题,通过对非晶硅锗本征层设计合适的梯度带隙,可改善本征层空穴输运特性,使电池填充因子显著提高。在优化的光电结构设计基础上,单结非晶硅锗电池转换效率达9.07%,将其应用到a-Si∶H/a-SiGe∶H双结叠层电池中,效率达到12.03%。
P/L/N type single junction amorphous silicon germanium solar cells were investigated with radio frequency plasma enhanced chemical vapor deposition （RF-PECVD） technique. By means of optimizing the lateral and vertical feature size of etched sputtering ZnO：A1 substrates, the scattering properties were improved to increases the long wavelength response of amorphous silicon germanium solar cells （a-SiGe： H） efficiently. In the light of the bad fill factor of a-SiGe：H solar cells deposited with constant profiling, the hole transport property was improved efficiently by designing proper band gap profiling in a-SiGe： H intrinsic layers, which results in obvious improvement of fill factor. The conversion efficiency of 9.07% of single junction a-SiGe：H solar cell, and 12. 03% for the corresponding a-Si：H/a-SiGe：H tandem solar cell were achieved based on optimized photoelectric structure design.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2013年第12期2181-2185,共5页
Acta Energiae Solaris Sinica
基金
国家重点基础研究(973)计划(2011CBA00706
2011CBA00707)
国家高技术研究发展(863)计划(2013AA050302)
天津市科技支撑(12ZCZDGX03600)
天津市重大科技支撑计划(11TXSYGX22100)
高等学校博士学科点专项科研基金(20120031110039)
关键词
非晶硅锗薄膜太阳电池
长波响应
锗流量梯度
双叠电池
amorphous silicon germanium solar cells
long wavelength response
GeH4 flow grading
tandem solar cell
作者简介
通讯作者：张晓丹（1973-），女，博士、教授、博士生导师，主要从事薄膜光电子材料和器件方面的研究。xdzhang@nankai．edu．cn
