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Controllable synthesis,characterization,and growth mechanism of hollow Zn_x Cd_(1-x) S spheres generated by a one-step thermal evaporation method

Controllable synthesis,characterization,and growth mechanism of hollow Zn_x Cd_(1-x) S spheres generated by a one-step thermal evaporation method
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摘要 Novel hollow ZnxCdl xS spheres that are uniform in size are synthesized through the one-step thermal evaporation of a mixture of Zn and CdS powder. From an X-ray diffraction (XRD) study, the hexagonal wurtzite phase of ZnxCdl_xS is verified, and the Zn mole fraction (x) is determined to be 0.09. According to the experimental results, we propose a mechanism for the growth of Zn0.09Cd0.91S hollow spheres. The results of the cathodoluminescence investigation indicate uniform Zn, Cd, and S distribution of alloyed Zn0.09Cd0.91S, instead of separate CdS, ZnS, or nanocrystals of a core- shell structure. To the best of our knowledge, the fabrication of ZnxCd1-xS hollow spheres of this kind by one-step thermal evaporation has never been reported. This work would present a new method of growing and applying hollow spheres on Si substrates, and the discovery of the Zn0.09Cd0.91S hollow spheres would make the investigation of ZnxCd1-xS micro/nanostructures more interesting and intriguing. Novel hollow ZnxCdl xS spheres that are uniform in size are synthesized through the one-step thermal evaporation of a mixture of Zn and CdS powder. From an X-ray diffraction (XRD) study, the hexagonal wurtzite phase of ZnxCdl_xS is verified, and the Zn mole fraction (x) is determined to be 0.09. According to the experimental results, we propose a mechanism for the growth of Zn0.09Cd0.91S hollow spheres. The results of the cathodoluminescence investigation indicate uniform Zn, Cd, and S distribution of alloyed Zn0.09Cd0.91S, instead of separate CdS, ZnS, or nanocrystals of a core- shell structure. To the best of our knowledge, the fabrication of ZnxCd1-xS hollow spheres of this kind by one-step thermal evaporation has never been reported. This work would present a new method of growing and applying hollow spheres on Si substrates, and the discovery of the Zn0.09Cd0.91S hollow spheres would make the investigation of ZnxCd1-xS micro/nanostructures more interesting and intriguing.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第10期571-574,共4页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China (Grant No.11174132) the National Key Project for Basic Research of China (Grant Nos.2011CB922102 and 2012CB932304) the Science Fund from the National Laboratory of Solid State Microstructures,Nanjing University,China (Grant No.2010ZZ18)
关键词 ZnxCd1-xS hollow spheres SEMICONDUCTORS vapour deposition growth mechanism ZnxCd1-xS, hollow spheres, semiconductors, vapour deposition, growth mechanism
作者简介 Corresponding author. E-mail: njumethods@ 163.com
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