摘要
基于SU-8和BPN紫外负性感光胶,结合微电镀工艺加工制作射频同轴传输线,以实现射频器件信号的传输与耦合。首先确定在阻抗匹配情况下同轴传输线特性阻抗为50Ω的同轴传输线的具体尺寸,然后通过HFSS仿真软件对设计的结构进行模拟仿真。通过仿真结果验证设计的可行性,采用紫外光刻技术利用SU-8光刻胶做出内导体支柱,并用BPN光刻胶做出结构,对结构进行电镀。最后将BPN光刻胶剥离,即可得到射频同轴传输线。此方法制得的同轴传输线具有介质损耗小、辐射损耗小、无色散、带宽大和抗干扰强的优点,适用于高性能射频和微波电路。另外,它的制作工艺能与其他射频和微波器件及集成电路工艺兼容,便于与射频和微波电路集成。
Based on SU - 8 and BPN negative UV photoresists and combined with the micro elec-troplating process, the RF coaxial transmission line was processed to realize the signal transmission and couple of the RF device. Firstly, the specific size of the coaxial transmission line with 50Ω characteristic impedance was determined under the matching case, and then the designed structure was simulated with the high frequency simulator structure （HFSS） software. The fea- sibility of the design was verified through the simulation results. The inner conductor pillar was made using the ultraviolet lithography technology with SU - 8 photoresist. Besides that, the structure was obtained with the BPN photoresist, and then the structure was electroplated. Fi- nally, the BPN photoresist was striped, and the RF coaxial transmission line was achieved. The coaxial transmission line made by this method has small dielectric loss and radiation loss, no dis- persion, large bandwidth and strong anti-interference, thus can be applied to high-performance RF and microwave circuits. In addition, the process can be compatible with other RF and microwave device and integrated circuit processes, and easy to be integrated with RF and microwave circuits.
出处
《微纳电子技术》
CAS
北大核心
2013年第6期397-402,共6页
Micronanoelectronic Technology
关键词
同轴传输线
光刻
电镀
SU-8光刻胶
BPN光刻胶
coaxial transmission line
photolithography
electroplating
SU-8 photoresist
BPN photoresist
作者简介
范新磊（1986-），男，河南新乡人，硕士研究生，主要研究方向为MEMS器件的设计与制造
张斌珍（1974-），男，山西岚县人．教授，主要研究方向为微纳机电系统（MEMS／NEMS）恶劣环境下的动态测试技术，并在此领域内先后开展了微纳器件和系统的设计制造、微弱信号检测与处理以及恶劣环境下存储测试理论与技术的研究。
