摘要
将Cu模铸造得到的Zr_(55)Cu_(30)Al_(10)Ni_5块体非晶合金分别在390,430,530,792和902℃进行退火处理,并采用脉冲激光对其进行重熔,研究基材晶化特征对熔池及热影响区晶化行为的影响.结果表明,未晶化的退火处理试样(经390和430℃退火处理)在激光重熔后,热影响区的晶化特征不受初始退火处理温度的影响.完全晶化的退火处理试样(经530,792和902℃退火处理)在激光重熔后,熔池基本上保持了非晶状态.经530和792℃退火处理后试样的熔池底部没有发现外延生长现象.经902℃退火处理的试样在激光重熔后,单次激光重熔的熔池底部有少量的外延生长,而经11次激光重熔的熔池底部无外延生长.分析表明,外延生长是因为CuZr2初生相在重熔过程中在熔池底部产生了成分保留区域.由于熔池内非晶合金的扩散缓慢,在激光重熔Zr_(55)Cu_(30)Al_(10)Ni_5非晶合金过程中,熔池底部即使是晶态也难以产生外延生长,所以激光加工Zr_(55)Cu_(30)Al_(10)Ni_5非晶合金时,熔池内很容易保持非晶状态.
The crystallization behavior of annealed metallic glasses during pulsed laser remelting was investigated in this work. The as-casted Zr55Cu30Al10Ni5 bulk metallic glasses were annealed at 390, 430,530, 792 and 902 E separately. And then these annealed alloys were remelted by pulsed laser. The experiment results show that the alloys annealed at 390 and 430 ℃ were still metallic glasses, and their crystallization behavior during remelting is similar to the remelting of metallic glass without annealing treatment. The specimens annealed at 530, 792 and 902℃ were completely crystallized. After remelting, the molten pools of these specimens were amorphous. For the specimens annealed at 530 and 792℃, there was no obvious epitaxial growth at the bottom of molten pools. For the specimens annealed at 902 ℃, there was little primary phase epitaxial growth at bottom of molten pool after one time laser remelting while without epitaxial growth after 11 times laser remelting. The epitaxial growth was caused by the area reserved the composition distribution of CuZr2 primary phase during laser remelting. So it is hard to obtain epitaxial growth during laser remelting for Zr55Cu30Al10Ni5 bulk metallic glasses even it has a crystallization substrate because of the slow diffusion. So it is easy to keep molten pool as amorphous state during laser treating Zr55Cu30Al10Ni5 bulk metallic glasses.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
2013年第6期649-657,共9页
Acta Metallurgica Sinica
基金
国家自然科学基金项目50971102
国家重点基础研究发展计划项目2011CB610402
高等学校博士学科点专项科研基金项目20116102110016资助~~
作者简介
杨高林，男，1980年生，博士生
