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退火对掺铟氧化锌薄膜结构及光学性能的影响 被引量:1

Effects of annealing on the structure and optical property of indium-doped ZnO thin films
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摘要 采用溶胶-凝胶法在石英衬底上制备掺铟氧化锌薄膜,研究不同退火温度对薄膜结构及发光性能的影响.结果表明,掺铟氧化锌薄膜仍为六角纤锌矿结构的ZnO相,在大于450 nm的波段薄膜样品的透射率都较高;随着退火温度的升高,透射率先增后减,600℃时达到最大;薄膜样品的光学带隙都小于纯ZnO的理论值(3.37 eV),且随退火温度的升高呈先减后增趋势;样品的结晶度与发光强度随着退火温度的升高而增强. Indium-doped ZnO thin films were prepared on quartz substrates by using sol-gel method, the results were as follows: in- dium-doped ZnO thin films exhibited a hexagonal wurtzite ZnO phase structure; in the wavelength of above 450 nm, thin films showed high optical transmittance which was related to the annealing temperature of samples; optical transmittance of thin films first- ly increased, reached the maximum vaule under sample annealing temperature of 600 ℃, then decreased. The band gaps of all sam- ples were lower than the theoretical value of pure ZNO(3.37 eV). With the increase of annealing temperature the band gaps of sam- pies first decreased and then increased. The degree of crystallinity and the luminous intensity of the sample increased with the in- crease of annealing temperature.
出处 《福建农林大学学报(自然科学版)》 CSCD 北大核心 2012年第6期650-654,共5页 Journal of Fujian Agriculture and Forestry University:Natural Science Edition
基金 福建省自然科学基金资助项目(2011J05122)
关键词 掺铟氧化锌 溶胶-凝胶法 半高宽 光学带隙 indium-doped ZnO sol-gel method full width at half maximum optical band-gap
作者简介 吴义炳(1974-),男,讲师.研究方向:光电子薄膜材料.Email:wyb.2009@163.com.
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