摘要
运用直流磁控溅射法可在金刚石颗粒表面沉积 1 50 nm的金属 Cr层 .在超高真空条件下 ,经 3 0 0—60 0℃的热退火处理 ,可促进 Cr膜与金刚石基底间的界面扩散和反应 .利用俄歇电子能谱研究了 Cr/金刚石颗粒界面的结合状态 ,发现 Cr与金刚石薄膜发生了强烈的界面扩散 ,Cr元素渗入金刚石层达 90 nm,并在界面上发生化学反应形成 Cr的碳化物层 .对界面扩散反应动力学的研究表明 ,Cr/金刚石界面扩散反应的表观活化能为 3 8.4 k J/ mol,界面扩散反应主要由碳的扩散过程控制 .热处理温度越高 ,界面扩散及反应越显著 ,但不利于碳化物层生成的氧化反应速度也会有所增加 ,界面反应产物从 Cr2 C3转变为 Cr2 C物种 .延长热处理时间有利于金属碳化物的生成 ,同样导致界面反应产物从 Cr2 C3转变为 Cr2
A Cr layer with thickness of 150 nm was successfully deposited on the surface of diamond particles using DC magnetron sputtering technique. The interface diffusion and reaction between Cr and diamond was promoted by annealing in the range from 300 ℃ to 600 ℃ in high vacuum. The Auger profile results showed that the width of interface layer was more than 90 nm. A Cr 2C carbide layer was formed after Cr/diamond annealed above 500 ℃. The formation of Cr 2C on the interface was confirmed by Auger line shapes. When the annealing temperature was below 500 ℃ and annealing time less than 4 h, Cr 2C 3 interface species was formed. Higher temperature and longer time resulted in Cr 2C interface species. The chemical reaction suggested that there was a strong chemical bond on the interface of Cr/diamond, which was one of the important factors for the high adhesion strength between metal and diamond. The interface diffusion and reaction was governed by the diffusion of carbon from diamond substrate. The activation energy of the interface diffusion reaction was 38 4 kJ/mol. The interface species varied with annealing temperature and time.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
2000年第8期1269-1272,共4页
Chemical Journal of Chinese Universities
基金
国家教育部留学回国人员启动基金
