摘要
采用喷涂工艺制备了结构为ITO/ZnO/P3HT∶PCBM/V2O5/Ag(P3HT:聚噻吩;PCBM:6,6-苯基-C61-丁酸甲酯)的大面积倒置光伏器件,有效面积为1.0×1.1 cm2。光谱测试结果表明,退火处理后,P3HT∶PCBM薄膜吸收显著增强,并且产生一定程度的红移。采用ZnO和V2O5代替LiF和PEDOT∶PSS(聚(3,4-乙撑二氧噻吩)∶聚苯乙烯磺酸盐)作为器件修饰层,避免了PEDOT∶PSS对ITO的腐蚀和LiF潮解,采用Ag代替Al作为金属背电极避免了Al被氧化。经过后退火处理器件的效率从1.1%提升至1.65%。器件的稳定性相对于传统结构有了大幅提升,8周后器件效率只衰减10%。
Large-area inverted polymer solar cells with a device structure of ITO /ZnO /P3HT∶ PCBM /V 2 O 5 / Ag（P3HT： poly（3-hexylthiophene）;PCBM： [6,6]-phenyl C61-butyric acid methyl ester） were prepared with an active area of 1.0 × 1.1 cm 2 by spray coating technique.UV-Vis absorption spectrum of the P3HT∶ PCBM film indicated that the absorbance was dramatically strengthened,and the absorption peaks were red-shifted to some extent.ZnO and V 2 O 5 were used to replace LiF and PEDOT∶ PSS（4-ethylenedioxythiophene∶ polystyrene sulfonate） as the interfacial modified layers,in order to avoid corrosion of PEDOT ∶ PSS to ITO layer and deliquescence of LiF.In addition,Ag instead of Al was evaporated as the back electrode to avoid the oxidization of Al electrode.The efficiency of the device increased from 1.1% to 1.65% after thermal annealing.The stability of the inverted devices was markedly improved compared with traditional devices,with the efficiencies decreased by only 10% after storage for 8 weeks.
出处
《应用化学》
CAS
CSCD
北大核心
2012年第12期1423-1427,共5页
Chinese Journal of Applied Chemistry
基金
国家高技术研究发展计划(863)(2011AA050524)
国家自然科学青年基金(21104077)
作者简介
通讯联系人:王宁,助理研究员,Tel:0431-85262134,E-mail:ningwang@ciac.jl.cn,研究方向:高分子物理;共同通讯联系人:杨小牛,研究员,Tel:0431-85262838,E-mail:xnyang@ciac.jl.cn,研究方向:高分子物理
