摘要
基于宽禁带半导体材料的GaN基紫外探测器由于具有探测波长可调、工艺兼容性好、结构可多型化等优点,已成为近年来的研究热点。介绍了四种不同结构类型的紫外探测器:光导型、肖特基势垒、金属-半导体-金属、p-i-n结,并回顾了GaN基紫外探测器的的研究历程。
GaN-based wide bandgap semiconductor ultraviolet detector has become a research hotspot in recent years due to its many advantages such as adjustable response wavelength, good process compatibility and diverse structure applicability. This paper introduces four different types of UV detector：photoconductor, Schottky, MSM and p-i-n. The history of GaN-based ultraviolet detector is reviewed and discussed.
出处
《激光与红外》
CAS
CSCD
北大核心
2012年第11期1210-1214,共5页
Laser & Infrared
作者简介
刘万金（1986-），男，硕士研究生，主要从事焦平面读出电路设计。E—mail：hfgydx@163．com
