摘要
采用磁控反应溅射技术在p型Si(111)衬底上制备了Ta-Si-N薄膜与Cu/Ta-Si-N复合结构,并对样品进行了快速热处理。用四探针电阻测试仪、原子力显微镜、X射线衍射和扫描电镜等对样品的电阻、形貌、结构与特性进行了分析表征。实验结果表明,随着N含量的增加,Ta-Si-N薄膜的方块电阻单调增加,表面粗糙度则先减小后增大;Ta-Si-N阻挡层的阻挡性能随N含量的增加而有所增强,但当N含量过大时,阻挡性能的提升并不明显;沉积态的Ta-Si薄膜为纳米晶结构,掺入N后,薄膜成为非晶态,但在高温热处理后Ta-Si-N薄膜重新结晶,铜原子主要通过晶界扩散并与Si反应,导致阻挡层失效。
The Ta-Si-N and Cu/Ta-Si-N coating were deposited by reactive magnetron sputtering on p-type Si（111） substrates. The influencing deposition conditions, including the sputtering power, ratio of N2/Ar gas flow rates, and pres- sure, were evaluated. The films were characterized with X-ray diffraction, atomic force microscopy, scanning electron mi- croscopy, and four-point probe. The results show that the N content of the films significantly affects the microstructures and diffusion-barrier property. For instance, as the N-content increased, the sheet resistance of the Ta-Si-N monotonically in- creased;its surface roughness varied in a decrease-increase pattern; its diffusion barrier property slightly improved, but less sensitive to higher N-content. N-doping turned the nano-crystalline grains, in the as-deposited Ta-Si films, into amor- phous;and high temperature annealing re-crystallized the amorphous Ta-Si-N films. However, the cross grain-boundary diffusion of Cu atom resulted in a failure of the diffusion barrier.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2012年第7期577-581,共5页
Chinese Journal of Vacuum Science and Technology
基金
湖南省科技计划项目(2010JT4038)
中央高校基本科研业务费专项资金资助(2012QNZT056)
作者简介
联系人:李幼真,E-mail:liyouzhen@mail.csu.edu.cn
