摘要
利用等离子体增强化学气相沉积(PECVD)技术,在ZnO/ZnMgO异质结构上制备SiO2作为栅绝缘层,采用光刻与腐蚀工艺制备ZnO/ZnMgO异质结场效应管。电学性能测试及计算结果表明器件栅压调控作用明显。发现栅端漏电流对器件性能造成一定影响。在低温条件下,栅绝缘层产生钝化,从而能够改善器件的性能。
The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor （HFET） were reported in this paper. The HFET was grown on a-plane sapphire substrate by metal-organic vapor phase epitaxy （MOVPE） technology, and was fabricated by a conventional photolithography tech- nique combined with wet etching. The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 μS · mm-1 and mobility of 182 cm2 · V^-1 . s^-1 at room temperature. The property was limited by leakage current through the SiO2, gate insulator. At low temperature, the performance was improved due to the reduced leakage current.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2012年第4期449-452,共4页
Chinese Journal of Luminescence
基金
国家自然科学基金(61025020
60990312)
国家"973"计划项目(2011CB302003)
江苏省自然科学基金(SBK201121728)资助项目
作者简介
朱振邦(1985-),男,吉林松原人,主要从事ZnO基光电器件制备的研究。E-mail:abang985@163.com;Corresponding Author:顾书林,E-mail:slgu@nju.edu.cn
