摘要
以常规 TEM为工具 ,研究了 Si CP/ ZL10 9复合材料中数十个 Si C颗粒及其界面 ,Si优先在 Si C表面上形核、长大 ,形成界面 Si,并形成大量 Si C/ Si界面。靠近 Si C界面的 Al基体中 ,普遍存在一层厚度小于 1μm的“亚晶铝带”,其内有大量位错。Si C与 Al、Si C与 Si之间虽然没有固定的晶体学位向关系 ,但是存在下列优先关系 :(110 3) Si C/ /(111) Al,[112 0 ]Si C/ / [110 ]Al;(110 1) Si C/ / (111) Si;[112 0 ]Si C/ / [112
SiC P/ZL109 composites fabricated by centrifugal casting and squeeze casting were characterized by conventional TEM. The leading phase Si in the (Al+Si) eutectic tended to nucleate and grow preferentially at the SiC surface(facets), thus forming the characteristic “interfacial Si” and the SiC/Si interfaces. A “subgrain Al layer” was usually observed at the Al side of a SiC/Al interface, which was less than 1μm thick with high density of dislocation generated in it. Measurements of crystallographic orientation relationship between SiC and Al and between SiC and Si were made at tens of SiC/Si and SiC/Al interfaces. It is shown that no fixed and unique orientation relationships were determined, though the following preferential ones were observed: (1103) SiC //(111) Al ,[1120] SiC //[110] Al ; (1101) SiC //(111) Si ,[1120] SiC //[112] Si .
出处
《复合材料学报》
EI
CAS
CSCD
北大核心
2000年第1期65-70,共6页
Acta Materiae Compositae Sinica
基金
广东省科学基金! ( 95 0 2 82 )
关键词
SiC/Al界面
碳化硅增强
界面行为
铝基复合材料
SiC P/ZL109 composites
SiC/Al interface
SiC/Si interface
crystallographic orientation relationship
interfacial Si
subgrain Al layer
