摘要
介绍了一种宽带放大器芯片,该放大器的工作频率覆盖了2～12 GHz,采用砷化镓(GaAs)赝配高电子迁移率晶体管(PHEMT)单片电路工艺实现。在一个宽带负反馈放大器的前面集成了一个幅度均衡器,使放大器的增益在整个带内具有7 dB的正斜率,频率低端(2 GHz)增益为3 dB,高端(12 GHz)为10 dB,输入输出电压驻波比为1.6∶1,饱和输出功率为20 dBm,芯片尺寸为2.0 mm×1.5 mm×0.1 mm。详细描述了电路的设计流程,并对最终的测试结果进行了分析。该芯片具有频带宽、体积小、使用方便的特点,可作为增益块补偿微波系统中随着频率升高而产生的增益损失。
A wide band GaAs MMIC amplifier with GaAs PHEMT technology was described. Its frequency covers 2 - 12 GHz bandwidth. A amplitude equalizer was added in front of the feedback wide band ampilifer. The amplifier has 7 dB positive gain slop, the gain is 3 dB at 2 GHz and 10 dB at 12 GHz, the VSWR is less than 1.6：1 and the chip size is 2.0 mm×1.5 mm×0.1 mm. The design procedure was described and the test results were analysed. The circuit is convenience for use, small size and wide band. It can be used as a gain block to compensate the gain loss with increasing frequency in microwave systems.
出处
《半导体技术》
CAS
CSCD
北大核心
2012年第2期118-121,共4页
Semiconductor Technology
关键词
宽带
砷化镓
赝配高电子迁移率晶体管
均衡器
放大器
wide band
GaAs
pseudomorphic high electronic mobility transistor （PHEMT）
equalizer
amplifier
作者简介
E-mail：liuwenjie_weicai@163．com刘文杰（1979-），男，河北人，电子工程专业，主要从事微波单片电路的研究开发工作。
