摘要
为了提高晶体硅太阳能电池的光电转换效率,以及获得较佳的减反射膜的膜厚和折射率,根据计算得出的在波长为600 nm的太阳光下减反射膜的膜厚和折射率的最佳理论值,设计了三组等离子体增强化学气相沉积工艺(1#,2#和3#工艺),来制备不同膜厚和折射率的SiN_x:H(氮化硅)减反射膜。实验结果显示:1#工艺对应的膜厚为83 nm,折射率为2.01;2#工艺对应的膜厚为75 nm,折射率为2.01;3#工艺对应的膜厚为66 nm,折射率为2.02。1#工艺对应电池片的转换效率为18.00%,2#工艺对应电池片的转换效率为18.08%,3#工艺对应的转换效率为17.99%。因此在目前的生产条件下,2#镀膜工艺优于1#和3#工艺。
In order to improve the crystalline silicon solar cells photoelectric conversion efficiency and obtain the antireflection coating with the better thickness and refractive index, three groups of craft （1#, 2# and 3#） were designed. Antireflection coatings were prepared with different thickness and refractive index using plasma enhanced chemical vapor deposition, according to the best theoretical calculation value of thickness and the index of refraction at the wavelength of 600 nm. The results show that the thickness of 1# is 83 nm, refractive index is 2.01; the thickness of 2# is 75 nm, refractive index is 2.01 ; and the thickness of 3# is 66 nm, refractive index is 2.02. The conversion efficiency of 1# is 18.00%, the conversion efficiency of 2# is 18.08%, and the conversion efficiency 3# is 17.99%. The deposition craft of 2 # was better than other two under current production situations.
出处
《上海有色金属》
CAS
2011年第4期179-181,191,共4页
Shanghai Nonferrous Metals
关键词
晶体硅
转换效率
等离子体增强
化学气相沉积
SiNx:H
减反射膜
crystalline silicon
conversion efficiency
plasma enhanced
chemical vapor deposition
SiNx： H
anti-reflection coating
作者简介
秦尤敏（1985-），女，广西桂林人，硕士，主要从事等离子增强化学气相沉积技术制备氮化硅薄膜的研究。Tel：13701925941，E-ITlial：ehaofi1129@126．com。
