期刊文献+

A 3.125-Gb/s inductorless transimpedance amplifier for optical communication in 0.35μm CMOS 被引量:2

A 3.125-Gb/s inductorless transimpedance amplifier for optical communication in 0.35μm CMOS
原文传递
导出
摘要 A 3.125-Gb/s transimpedance amplifier(TIA) for an optical communication system is realized in 0.35μm CMOS technology.The proposed TIA employs a regulated cascode configuration as the input stage, and adopts DC-cancellation techniques to stabilize the DC operating point.In addition,noise optimization is processed. The on-wafer measurement results show the transimpedance gain of 54.2 dBΩand -3 dB bandwidth of 2.31 GHz.The measured average input referred noise current spectral density is about 18.8 pA/(?).The measured eye diagram is clear and symmetrical for 2.5-Gb/s and 3.125-Gb/s PRBS.Under a single 3.3-V supply voltage,the TIA consumes only 58.08 mW,including 20 mW from the output buffer.The whole die area is 465×435μm^2. A 3.125-Gb/s transimpedance amplifier(TIA) for an optical communication system is realized in 0.35μm CMOS technology.The proposed TIA employs a regulated cascode configuration as the input stage, and adopts DC-cancellation techniques to stabilize the DC operating point.In addition,noise optimization is processed. The on-wafer measurement results show the transimpedance gain of 54.2 dBΩand -3 dB bandwidth of 2.31 GHz.The measured average input referred noise current spectral density is about 18.8 pA/(?).The measured eye diagram is clear and symmetrical for 2.5-Gb/s and 3.125-Gb/s PRBS.Under a single 3.3-V supply voltage,the TIA consumes only 58.08 mW,including 20 mW from the output buffer.The whole die area is 465×435μm^2.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第10期97-102,共6页 半导体学报(英文版)
基金 Project supported by the National High Technology Research and Development Program of China(No.2006AA012284)
关键词 pre-amplifier CMOS technology RGC input stage DC-cancellation low power dissipation pre-amplifier CMOS technology RGC input stage DC-cancellation low power dissipation
作者简介 Corresponding author. Email: xhseu@163.com
  • 相关文献

参考文献1

二级参考文献9

  • 1田俊,王志功,梁帮立,熊明珍,施毅,郑有炓.CMOS1.4THzΩ155Mb/s光接收机差分跨阻前置放大器[J].Journal of Semiconductors,2004,25(11):1486-1490. 被引量:6
  • 2Govind P. Agrawal. Fiber-Optic Communication Systems[ M ]. 3^rd ed. New York:John Wiley & Sons,2002.
  • 3Hitoshi I,Tomoyuki O,Masanori T, et al.An auto-gain control transimpedance amplifier with low noise and wide input dynamic range for 10-Gb/s optical communication systems[ J]. Journal of Solid-State Circuits,2001,36(5) : 1303-1308.
  • 4S M Park, H -J Yoo. 1.25-Gb/s regulated cascode CMOS transimpedance amplifier for gigabit ethernet applications[ J]. IEEE Journal of Solid-State Circuits,2004,39(1) : 112-121.
  • 5Khorramabadi H, Tzeng L D, et al. A 1,06Gb/s -31dBm to 0dBm BiCMOS optical preamplifier featuring adaptive transimpedance[ A]. IEEE International Solid-State Circuits Conference[ C] .San Francisco: IEEE Press, 1995.54-55.
  • 6Behzad Razavi. Design of Integrated Circuits for Optical Communications[ M] .New York: McCraw-Hill,2003.
  • 7Sanduleanu M A T, Manteman P. A low noise, wide dynamic range, transimpedance amplifier with automatic gain control for SDH/SONET(STM16/OC48) in a 30GHz iT BiCMOS process[ A ]. 27th European Solid-State Circuits Conference[ C]. Villach:IEEE Press,2001. 190-193.
  • 8Robert G Meyer. Low-power monolithic RF peak detector analysis[ J]. IEEE Journal of Solid-State Circuits, 1995,30(1) : 65-67.
  • 9Yong-Hun Oh, Sang-Gug Lee,Park H H.A 2.5Gb/s CMOS transimpedauce amplifier using novel active inductor load [A].27^th European Solid-State Circuits Conference[ C]. Villach: IEEE Press,2001. 190-193.

共引文献3

同被引文献4

引证文献2

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部