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非晶硅/晶体硅(a-Si/c-Si)异质结 被引量：1

Property Investigation of a-Si/c-Si Hetero-Junction Structure
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摘要 通过对非晶硅/晶体硅(a-Si/c-Si)异质结能带不连续、发射结掺杂以及界面态密度进行分析,研究它们对a-Si/c-Si异质结的界面特性,以及a-Si(N+)/c-Si(P)结构电池性能的影响.研究发现,能带不连续以及a-Si发射结高掺杂有利于实现界面复合机制由以悬挂键复合主导的复合机制向由少数载流子复合占主导的SRH(Shockly-Read-Hall)复合机制转变,有效降低界面复合速率.AFORS-HET软件模拟显示:在c-Si(P)衬底掺杂浓度为1.6×1016cm-3时,a-Si(N+)发射结掺杂浓度大于1.5×1020cm-3是获得高电池效率的必要条件;与短路电流密度相比,开路电压受a-Si/c-Si界面态密度影响更明显. This paper investigated the influence of a-Si/c-Si band offset,amorphous silicon emitter doping concentration and interface defects density on interface property of a-Si/c-Si structure.Band offset in a-Si（N＋）/c-Si（P） hetero-junction and a-Si emitter high level doping is very useful for the transformation of recombination mechanism from dangling bond to SRH（Shockly-Read-Hall）.AFORS-HET simulation indicates that a-Si（N＋） emitter doping level of over 1.5×1020 cm-3 on c-Si（P） is an indispensable condition for achieving high efficiency.Comparing with density of short circuit current,open circuit voltage of a-Si/c-Si structure cell is much more susceptible to interface defect density.
作者 汪建强 高华 张剑 张松 李晨 叶庆好 孟凡英
机构地区 上海交通大学太阳能研究所 上海超日太阳能科技股份有限公司
出处 《上海交通大学学报》 EI CAS CSCD 北大核心 2011年第6期798-803,共6页 Journal of Shanghai Jiaotong University
基金 上海市科学技术委员会和应用材料国际科技合作基金(08520741400) 上海市科学技术委员会优秀学科带头人基金(08XD14022)
关键词 非晶硅/晶体硅 发射结掺杂 界面态密度 amorphous silicon/crystal silicon emitter doping interface defect density（Dit）
分类号 TM914.4 [电气工程—电力电子与电力传动]
作者简介 汪建强（1980-），男，湖北宜昌市人，博士生，从事非晶硅／晶体硅异质结电池研究，E-mail：wangwjq@gmail．com． 孟凡英（联系人），女，副教授，电话（Tel.）：021-54743243；E-mail：fymeng801@sjtu．edu．cn．
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参考文献20

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同被引文献12

  • 1Goetzberger A, Hebling C, Schock H W. Photovohaic materials, History, status and outlook [ J ]. Materials Science and Engineering-Reports, 2003, 40 ( 1 ) : 1- 46.
  • 2Mishima Takahiro, Taguchi Mikio, Sakata Hitoshi, et al. Development status of high-efficiency HIT solar cells [J]. Solar Energy Materials and Solar Cells, 2011, 95(1) : 18-21.
  • 3Stangl R, Kriegel M., Maydell K V. AFORS-HET: An open-source on demand numerical PC program for simu- lation of (thin film) heterojunction solar sells, Version 1.2 [ EB/OL]. www. hmi. de/bereiche/SE/SEl / projects/aSicSi/AFORSHET.
  • 4de Juliol Barcelona. Silicon heterojunction solar ceils ob- tained by HOT-wire CVD, 2008 [EB/OL]. http:// www. tdr. cesca, es/TESIS_ UPC/AVAILABLE/TDX- 1106108-132529/01Dmc01 deO1. pdf.
  • 5Lien Shui-Yang, Wu Bing-Rui, Liu Jun-Chin, et al. Fabrication and characteristics of n-Si/c-Si/p-Si hetero- junction solar ceils using hot-wire CVD [ J ]. Thin Solid Fihns, 2008, 516(5): 747-750.
  • 6SANYO Electric Co. , Ltd. 2010 press release[ EB/OL]. http ://panasonic. net/sanyo/news/2010/01/.
  • 7de Wolf Stefaan, Kondo Michio. Nature of doped a-Si: H/c-Si interface recombination [ J ]. Journal of Applied Physics, 2009, 105(10): 103707-103707-6.
  • 8Zhao L, Li H L, Zhou C L, et al. Optimized resistivity of p-type Si substrate for HIT solar cell with A1 backsurface field by computer simulation[ J]. Solar Energy, 2009, 83 (6) : 812-816.
  • 9Dao Vinh Ai, Heo Jongku, Choi Hyungwook. Simulation and study of the influence of the buffer intrinsic layer, back-surface field, densities of interface defects, resisti- vity of p-type silicon substrate and transparent conductive oxide on heterojunction with intrinsic thin-layer (HIT) solar cell[ J ]. Solar Energy, 2010, 84(5) : 777-783.
  • 10Zhao L, Zhou C L, Li H L, et al. Design optimization of bifacial HIT solar cells on p-type silicon substrates by simulation [ J ]. Solar Energy Material and Solar Cells,2008, 92(6) : 673-681.

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二级引证文献8

上海交通大学学报
2011年 第6期

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